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Erschienen in: Journal of Nanoparticle Research 11/2013

01.11.2013 | Research Paper

Tribochemical interaction between nanoparticles and surfaces of selective layer during chemical mechanical polishing

verfasst von: Filip Ilie

Erschienen in: Journal of Nanoparticle Research | Ausgabe 11/2013

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Abstract

Nanoparticles have been widely used in polish slurries such as those in the chemical mechanical polishing (CMP) process. For understanding the mechanisms of CMP, an atomic force microscope (AFM) is used to characterize polished surfaces of selective layers, after a set of polishing experiments. To optimize the CMP polishing process, one needs to get information on the interaction between the nano-abrasive slurry nanoparticles and the surface of selective layer being polished. The slurry used in CMP process of the solid surfaces is slurry with large nanoparticle size colloidal silica sol nano-abrasives. Silica sol nano-abrasives with large nanoparticle are prepared and characterized by transmission electron microscopy, particles colloidal size, and Zeta potential in this paper. The movement of nanoparticles in liquid and the interaction between nanoparticles and solid surfaces coating with selective layer are very important to obtain an atomic alloy smooth surface in the CMP process. We investigate the nanoparticle adhesion and removal processes during CMP and post-CMP cleaning. The mechanical interaction between nanoparticles and the wafer surface was studied using a microcontact wear model. This model considers the nanoparticle effects between the polishing interfaces during load balancing. Experimental results on polishing and cleaning are compared with numerical analysis. This paper suggests that during post-CMP cleaning, a combined effort in chemical and mechanical interaction (tribochemical interactions) would be effective in removal of small nanoparticles during cleaning. For large nanoparticles, more mechanical forces would be more effective. CMP results show that the removal rate has been improved to 367 nm/min and root mean square (RMS) of roughness has been reduced from 4.4 to 0.80 nm. Also, the results show that the silica sol nano-abrasives about 100 nm are of higher stability (Zeta potential is −65 mV) and narrow distribution of nanoparticle size. Consequently, one kind of alkali slurry containing 100-nm silica sol for the solid surfaces CMP coating through selective transfer is studied in this paper.

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Literatur
Zurück zum Zitat Ahn Y, Yoon J-Y, Baek C-W, Kim Y-K (2004) Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction. Wear 257:785–789CrossRef Ahn Y, Yoon J-Y, Baek C-W, Kim Y-K (2004) Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction. Wear 257:785–789CrossRef
Zurück zum Zitat Cooper K, Cooper J, Groschopf J, Flake J, Solomentsev Y, Karkas J (2002) Effects of particle concentration on chemical planarization. Electrochem Solid-State Lett 5(12):G109–G112CrossRef Cooper K, Cooper J, Groschopf J, Flake J, Solomentsev Y, Karkas J (2002) Effects of particle concentration on chemical planarization. Electrochem Solid-State Lett 5(12):G109–G112CrossRef
Zurück zum Zitat de Nardis D, Doi T, Hiskey B, Ichikawa K, Ichikawa D, Philipossian A (2006) Modelling copper CMP removal rate dependency on wafer pressure, velocity, and dissolved oxygen concentration. J Electrochem Soc 153(5):G428–G436CrossRef de Nardis D, Doi T, Hiskey B, Ichikawa K, Ichikawa D, Philipossian A (2006) Modelling copper CMP removal rate dependency on wafer pressure, velocity, and dissolved oxygen concentration. J Electrochem Soc 153(5):G428–G436CrossRef
Zurück zum Zitat de Rege F, Zang P, Grumbine S, Aggio J, Martin R, Brusic V (2009) Organic oxidants for chemical mechanical planarization. Electrochem Solid-State Lett 12(1):H21–H25CrossRef de Rege F, Zang P, Grumbine S, Aggio J, Martin R, Brusic V (2009) Organic oxidants for chemical mechanical planarization. Electrochem Solid-State Lett 12(1):H21–H25CrossRef
Zurück zum Zitat Ein-Eli J, Starosvetsky D (2006) Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective. Electrochim Acta 52:1825–1838CrossRef Ein-Eli J, Starosvetsky D (2006) Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective. Electrochim Acta 52:1825–1838CrossRef
Zurück zum Zitat Estragnat E, Tang G, Jahanmir S, Pei P, Martin JM, Liang H (2004) Experimental investigation on mechanisms of silicon chemical mechanical polishing. J Electron Mater 33(4):334–339CrossRef Estragnat E, Tang G, Jahanmir S, Pei P, Martin JM, Liang H (2004) Experimental investigation on mechanisms of silicon chemical mechanical polishing. J Electron Mater 33(4):334–339CrossRef
Zurück zum Zitat Estragnat E, Kulkarni M, Ng D, McMullen D, Bahten K, Ling H (2005) Friction forces in post CMP cleaning applications. A2C2 Magazine 8(1):14–78 Estragnat E, Kulkarni M, Ng D, McMullen D, Bahten K, Ling H (2005) Friction forces in post CMP cleaning applications. A2C2 Magazine 8(1):14–78
Zurück zum Zitat Garkunov DN (1981) Erhöhung der Verschleissfestigkeit auf der selektiven Übertrangung. VEB Verlag Technik, Berlin Garkunov DN (1981) Erhöhung der Verschleissfestigkeit auf der selektiven Übertrangung. VEB Verlag Technik, Berlin
Zurück zum Zitat Garkunov D N (2001) Tribotechnology (Wear and Non-wear). Moscow, Textbook, (in Russian) Garkunov D N (2001) Tribotechnology (Wear and Non-wear). Moscow, Textbook, (in Russian)
Zurück zum Zitat Hsieh H, Averback RS, Sellers H et al (1992) Molecular-dynamics simulations of collisions between clusters of atoms and metal substrates. Phys Rev Bulletin 45:4417CrossRef Hsieh H, Averback RS, Sellers H et al (1992) Molecular-dynamics simulations of collisions between clusters of atoms and metal substrates. Phys Rev Bulletin 45:4417CrossRef
Zurück zum Zitat Ihnfeldt R, Talbor J (2007) Modelling of copper CMP using the colloidal behavior of an alumina slurry with copper nanoparticles. Electrochem Solid-State Lett 154(12):H1018–H1026 Ihnfeldt R, Talbor J (2007) Modelling of copper CMP using the colloidal behavior of an alumina slurry with copper nanoparticles. Electrochem Solid-State Lett 154(12):H1018–H1026
Zurück zum Zitat Ilie F (2002) Tribological thin films formed by selective transfer. Tech. Publ. House, Bucharest Ilie F (2002) Tribological thin films formed by selective transfer. Tech. Publ. House, Bucharest
Zurück zum Zitat Ilie F (2006) Studies and researches concerning the tribological behaviour of friction couple functioning with selective transfer. Tribol Int 39(8):774–780CrossRef Ilie F (2006) Studies and researches concerning the tribological behaviour of friction couple functioning with selective transfer. Tribol Int 39(8):774–780CrossRef
Zurück zum Zitat Ilie F (2011) Investigation into layers formed by selective transfer CMP mechanisms with atomic force microscope. J Nanopart Res 13(10):5519–5526CrossRef Ilie F (2011) Investigation into layers formed by selective transfer CMP mechanisms with atomic force microscope. J Nanopart Res 13(10):5519–5526CrossRef
Zurück zum Zitat Ilie F (2012) Models of nanoparticles movement, collision, and friction in chemical mechanical polishing (CMP). J Nanopart Res 14(3):752CrossRef Ilie F (2012) Models of nanoparticles movement, collision, and friction in chemical mechanical polishing (CMP). J Nanopart Res 14(3):752CrossRef
Zurück zum Zitat Ilie F, Tita C (2009) Interaction between nanoparticles during chemical mechanical polishing (CMP). Optics Adv Mater 3(3):245–249 Ilie F, Tita C (2009) Interaction between nanoparticles during chemical mechanical polishing (CMP). Optics Adv Mater 3(3):245–249
Zurück zum Zitat Kauki T, Kimura T, Nakamura T (2013) Chemical and mechanical properties of Cu surface reaction layers in Cu–CMP to improve planarization. ECSJ Solid State Sci Technol 2(9):P375–P379CrossRef Kauki T, Kimura T, Nakamura T (2013) Chemical and mechanical properties of Cu surface reaction layers in Cu–CMP to improve planarization. ECSJ Solid State Sci Technol 2(9):P375–P379CrossRef
Zurück zum Zitat Kyuno K, Cahill DG, Averback RS et al (1999) Surface defects and bulk defect migration produced by ion bombardment of Si(001). Phys Rev Lett 83:4788CrossRef Kyuno K, Cahill DG, Averback RS et al (1999) Surface defects and bulk defect migration produced by ion bombardment of Si(001). Phys Rev Lett 83:4788CrossRef
Zurück zum Zitat Lei H, Luo JB (2004) CMP of hard disk substrate using colloidal SiO2 slurry: preliminary experimental investigation. Wear 275(5–6):461–470CrossRef Lei H, Luo JB (2004) CMP of hard disk substrate using colloidal SiO2 slurry: preliminary experimental investigation. Wear 275(5–6):461–470CrossRef
Zurück zum Zitat Li J, Lu X, He Y, Luo J (2011) Modelling the chemical–mechanical synergy during copper CMP. J Electrochem Soc 158(2):H197–H202CrossRef Li J, Lu X, He Y, Luo J (2011) Modelling the chemical–mechanical synergy during copper CMP. J Electrochem Soc 158(2):H197–H202CrossRef
Zurück zum Zitat Lim MS, Paul AW, Scott SP (2004) Microscopic investigations of chemo-mechanical polishing of tungsten. Thin Solid Films 457(2):346–353CrossRef Lim MS, Paul AW, Scott SP (2004) Microscopic investigations of chemo-mechanical polishing of tungsten. Thin Solid Films 457(2):346–353CrossRef
Zurück zum Zitat Luo J, Dornfeld DA (2003) Material removal regions in CMP for submicron IC fabrication: coupling effects of slurry chemicals, abrasive size distribution and wafer-pad contact area. IEEE Trans Semiconduct Manuf 16(1):45–56CrossRef Luo J, Dornfeld DA (2003) Material removal regions in CMP for submicron IC fabrication: coupling effects of slurry chemicals, abrasive size distribution and wafer-pad contact area. IEEE Trans Semiconduct Manuf 16(1):45–56CrossRef
Zurück zum Zitat Luo JB, Xu J, Duan FL, et al. (2004) Variations of surface layer colloided with nanoparticles. 1st international conference on advanced tribology, 1–3 December, Singapore Luo JB, Xu J, Duan FL, et al. (2004) Variations of surface layer colloided with nanoparticles. 1st international conference on advanced tribology, 1–3 December, Singapore
Zurück zum Zitat Padgurskas J, Snitka V, Jankauskas V, Andriušis A (2006) Selective transfer phenomenon in lubricated sliding surfaces with copper and its alloy coatings made by electro-pulse spraying. Wear 260(6):652–661CrossRef Padgurskas J, Snitka V, Jankauskas V, Andriušis A (2006) Selective transfer phenomenon in lubricated sliding surfaces with copper and its alloy coatings made by electro-pulse spraying. Wear 260(6):652–661CrossRef
Zurück zum Zitat Palla BJ, Shah DO, Bielmann M (1998) Stabilization of alumina slurries in presence of oxidizers for tungsten chemical mechanical polishing. Electronics manufacturing technology symposium, twenty-third IEEE/CPMT, 155–163 Palla BJ, Shah DO, Bielmann M (1998) Stabilization of alumina slurries in presence of oxidizers for tungsten chemical mechanical polishing. Electronics manufacturing technology symposium, twenty-third IEEE/CPMT, 155–163
Zurück zum Zitat Steigerwald JM, Muraka SP, Gutmann RJ (1997) Chemical Mechanical Planarization of Microelectronic Materials. Wiley, New YorkCrossRef Steigerwald JM, Muraka SP, Gutmann RJ (1997) Chemical Mechanical Planarization of Microelectronic Materials. Wiley, New YorkCrossRef
Zurück zum Zitat Wang J, Cherin I, Haerle G (2010) Chemical mechanical planarization of tungsten with hard abrasieves. Electrochem Solid-State Lett 13(6):H182–H184CrossRef Wang J, Cherin I, Haerle G (2010) Chemical mechanical planarization of tungsten with hard abrasieves. Electrochem Solid-State Lett 13(6):H182–H184CrossRef
Zurück zum Zitat Yamaguchi Y, Gspann J (2002) Large-scale molecular dynamics simulations of cluster impact and erosion processes on a diamond surface. Phys Rev Bulletin 60:155408CrossRef Yamaguchi Y, Gspann J (2002) Large-scale molecular dynamics simulations of cluster impact and erosion processes on a diamond surface. Phys Rev Bulletin 60:155408CrossRef
Zurück zum Zitat Zantye PB, Kumar A, Sikder AK (2004) Chemical mechanical planarization for microelectronics applications. Mater Sci Eng 45(3–6):89–220 Zantye PB, Kumar A, Sikder AK (2004) Chemical mechanical planarization for microelectronics applications. Mater Sci Eng 45(3–6):89–220
Zurück zum Zitat Zhang KL (2004) Study on preparation and application of nanometer abrasive for chemical mechanical polishing in ULSI, Dissertation of doctor from Hubei University of Technology, Tianjin Zhang KL (2004) Study on preparation and application of nanometer abrasive for chemical mechanical polishing in ULSI, Dissertation of doctor from Hubei University of Technology, Tianjin
Zurück zum Zitat Zhang KL, Song ZT, Lin CL, Feng SL, Chen B (2007) Colloidal nano-abrasives and slurry for chemical-mechanical polishing of semi-conductor materials. J Ceram Process Res 8(1):52–55 Zhang KL, Song ZT, Lin CL, Feng SL, Chen B (2007) Colloidal nano-abrasives and slurry for chemical-mechanical polishing of semi-conductor materials. J Ceram Process Res 8(1):52–55
Metadaten
Titel
Tribochemical interaction between nanoparticles and surfaces of selective layer during chemical mechanical polishing
verfasst von
Filip Ilie
Publikationsdatum
01.11.2013
Verlag
Springer Netherlands
Erschienen in
Journal of Nanoparticle Research / Ausgabe 11/2013
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI
https://doi.org/10.1007/s11051-013-1997-3

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