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Erschienen in: Journal of Materials Science 22/2017

24.07.2017 | Chemical routes to materials

Wet chemical etching of ZnO films using NH x -based (NH4)2CO3 and NH4OH alkaline solution

verfasst von: Jae-Kwan Kim, Ji-Myon Lee

Erschienen in: Journal of Materials Science | Ausgabe 22/2017

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Abstract

In this paper, we deposited ZnO thin films by RF magnetron sputtering at room temperature from un-doped targets. Wet chemical etching of ZnO films in (NH4)2CO3 and NH4OH solutions were examined. For comparison, hydrochloric acid was also used as an etchant. The NH x -based alkaline solutions provide well-controlled etching rate, and smooth surface and sidewall profiles. Although NH x -based alkaline solution etch rates for ZnO were relatively low, they were enhanced with the use of a H3O stabilizer. In this case, the NH4OH solution went from reaction-dominant mode to diffusion-dominant mode, which is beneficial for smooth surface morphology.

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Metadaten
Titel
Wet chemical etching of ZnO films using NH x -based (NH4)2CO3 and NH4OH alkaline solution
verfasst von
Jae-Kwan Kim
Ji-Myon Lee
Publikationsdatum
24.07.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 22/2017
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-017-1409-7

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