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Journal of Materials Science
Erschienen in: Journal of Materials Science 14/2016

25.04.2016 | Original Paper

Aliovalent MnTi and GaTi substitution in high-temperature piezoelectric (x)Bi(Zn0.5Zr0.5)O3—(y)BiScO3—(100 – x − y)PbTiO3

verfasst von: B. Kowalski, A. Sayir, A. Sehirlioglu

Erschienen in: Journal of Materials Science | Ausgabe 14/2016

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Abstract

Aliovalent substitution of 1–2 % Mn and Ga for Ti has been carried out in the high-temperature ternary system (x)Bi(Zn0.5Zr0.5)O3—y)BiScO3—(100−x−y)PbTiO3 near the morphotropic phase boundary, specifically 2.5BZZ-37.5BS-60PT in an attempt to reduce the loss tangent. Modifications of this particular composition were chosen due its high-Curie temperature of 420 °C and excellent piezoelectric coefficient of 520 pm/V. Dielectric, piezoelectric, and electromechanical properties were characterized as a function of temperature, frequency, and electric field for all compositions. Small concentrations of Mn and Ga were shown to increase both the electrical and mechanical quality factors, with a Q m and Q e of 300 and 150, respectively, from room temperature up to 300 °C for Mn-doped compositions.
Vorheriger Artikel Energy transfer between Dy3+ and Eu3+ in Dy3+/Eu3+-codoped Gd2MoO6
Nächster Artikel Effects of alkyl side chain and electron-withdrawing group on benzo[1,2,5]thiadiazole–thiophene-based small molecules in organic photovoltaic cells

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Metadaten
Titel
Aliovalent MnTi and GaTi substitution in high-temperature piezoelectric (x)Bi(Zn0.5Zr0.5)O3—(y)BiScO3—(100 – x − y)PbTiO3
verfasst von
B. Kowalski
A. Sayir
A. Sehirlioglu
Publikationsdatum
25.04.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 14/2016
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-016-9963-y

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