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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 7/2015

01.07.2015

Analysis of carrier heating effects in quantum well semiconductor optical amplifiers considering holes’ non-parabolic density of states

verfasst von: Mingjun Xia, H. Ghafouri-Shiraz

Erschienen in: Optical and Quantum Electronics | Ausgabe 7/2015

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Abstract

This paper studies effects of carrier heating on the amplified pico-second Gaussian pulse propagation in a quantum well semiconductor optical amplifier (QW-SOA) taking into account the holes’ non-parabolic density of states. In the analysis we have also considered the discontinuous distribution of energy band structure and the coupling between heavy hole, light hole and spin-orbit spilt-off bands. It has been found that at higher temperatures the wavelength at which the peak value of modal gain occurs decreases (small blue shift). The pulse amplification performances of QW-SOAs for two unchirped Gaussian input pulses having the peak power values of 10 and 100 mw have been investigated both in the presence and absence of the carrier heating effects. It has been found that carrier heating effects broaden the amplified output signal pulse width and lower the peak value of the amplified output pulse.
Vorheriger Artikel Novel all-optical logic gates based photonic crystal waveguide using self imaging phenomena
Nächster Artikel Nonlinear optical responses and limiting behavior of sulfadiazine-chromotropic acid azo dye

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Metadaten
Titel
Analysis of carrier heating effects in quantum well semiconductor optical amplifiers considering holes’ non-parabolic density of states
verfasst von
Mingjun Xia
H. Ghafouri-Shiraz
Publikationsdatum
01.07.2015
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 7/2015
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-014-0049-2

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