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Erschienen in:
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2017 | OriginalPaper | Buchkapitel

Analysis of Electrolyte-Insulator-Semiconductor Tunnel Field-Effect Transistor as pH Sensor

verfasst von : Ajay Singh, Rakhi Narang, Manoj Saxena, Mridula Gupta

Erschienen in: VLSI Design and Test

Verlag: Springer Singapore

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Abstract

In this paper, an analysis of Silicon on Insulator (SOI) Electrolyte Insulator Semiconductor (EIS) Tunnel Field Effect Transistor (TFET) has been investigated for pH sensing application using 3-D device simulator “Sentaurus”. The electrolyte region has been considered an intrinsic semiconductor material in which the electron and hole charges represent the mobile ions in the aqueous solution. The dielectric constant, energy bandgap and electron affinity of electrolyte region are 78, 1.5 eV and 1.32 eV respectively. The effect of pH has been examined on the device electrostatics such as, surface potential, threshold voltage and drain current. The pH response is defined as the amount of threshold voltage shift when the pH (in the injected solution) is varied from lower to higher values.

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Metadaten
Titel
Analysis of Electrolyte-Insulator-Semiconductor Tunnel Field-Effect Transistor as pH Sensor
verfasst von
Ajay Singh
Rakhi Narang
Manoj Saxena
Mridula Gupta
Copyright-Jahr
2017
Verlag
Springer Singapore
Buch
VLSI Design and Test

Print ISBN: 978-981-10-7469-1

Electronic ISBN: 978-981-10-7470-7

Copyright-Jahr: 2017

DOI
https://doi.org/10.1007/978-981-10-7470-7_25

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