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Erschienen in: Journal of Materials Science: Materials in Electronics 16/2019

26.07.2019

Bi2O3-doping controlled magnetic and dielectric properties of low-temperature co-fired NiCuZn ferrite for high-frequency applications

verfasst von: Li Guo, Jie Li, Yan Yang, Gang Wang, Yiheng Rao, Gongwen Gan, Huaiwu Zhang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 16/2019

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Abstract

NiCuZn ferrite, due to its good magnetic properties, is a near optimal material for low-temperature co-fired ceramic (LTCC) filter applications. In this study, low temperature (860 °C and 880 °C) co-fired Ni0.26Cu0.22Zn0.52Fe2O4 ferrites with different quantities of Bi2O3 (1–11 wt% with an increment of 2 wt%) were synthesized using a solid-state reaction. The effect of the Bi2O3 additive on phase formation, microstructure, magnetic permeability, and dielectric permittivity are investigated. The results indicate that a suitable amount of Bi2O3 doping can increase both bulk density and the magnetic properties. The superfluous Bi2O3 and Fe3+ ions form Bi25FeO39, which improves the dielectric properties. More specifically, the sample with 5 wt% Bi2O3, sintered at 880 °C, shows excellent magnetic permeability (μ′ ~ 130 @ 1–10 MHz), low magnetic loss (tanδμ ~ 0.026), and a high cut-off frequency (~ 100 MHz). The sample with 9 wt% Bi2O3, sintered at 880 °C, exhibits excellent dielectric permittivity (ε′ ~ 14.5 @ 1–400 MHz), low dielectric loss (tanδε ~ 0.0075), and a high cut-off frequency (~ 1 GHz). These observations indicate that NiCuZn ferrites, with the right amount of Bi2O3, are promising candidate materials for LTCC applications.

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Metadaten
Titel
Bi2O3-doping controlled magnetic and dielectric properties of low-temperature co-fired NiCuZn ferrite for high-frequency applications
verfasst von
Li Guo
Jie Li
Yan Yang
Gang Wang
Yiheng Rao
Gongwen Gan
Huaiwu Zhang
Publikationsdatum
26.07.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 16/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01919-4

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