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2022 | OriginalPaper | Buchkapitel

5. Bi₂Se₃ Topological Insulator Thin Films for Various Device Applications

verfasst von : Sudhanshu Gautam, Sunil S. Kushvaha

Erschienen in: Nanomaterials for Innovative Energy Systems and Devices

Verlag: Springer Nature Singapore

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Abstract

Among binary chalcogenides family, Bi₂Se₃ thin films have been attracted a lot due to their unique electrical and optical properties, which enables the development of thermoelectric, optoelectronics, and topological insulator-based devices and applications. In energy field, thermoelectric material thin films have many advantages in refrigeration and power generation such as environment-friendly solid-state devices without moving parts, scalable, lightweight, long, and reliable working life at low cost. In addition, Bi₂Se₃ is a very good three-dimensional topological insulator material in which the boundary states are topologically protected against defects and non-magnetic impurities. In this chapter, we report on the deposition of Bi₂Se₃ thin films on Si (111), sapphire (0001), quartz, and Si (100) (n- and p-types) substrates by r.f. magnetron sputtering system and their optical, electrical, and thermoelectric properties. The high-resolution X-ray diffraction characterization revealed the growth of c-axis oriented Bi₂Se₃ crystalline thin film after post-selenization process of sputtered thin films. Scanning electron microscopy and energy dispersive X-ray analysis disclosed truncated hexagonal/triangular large grains with nearly stoichiometry Bi₂Se₃ film on Si(111) and sapphire (0001) substrates. Raman spectroscopy analysis also supports the good structural quality of Bi₂Se₃ thin films on these substrates as main pronounced characteristic peaks in the low wavenumber region; namely, E²_g (in-plane) A¹_1g, and A²_1g (out-of-plane) modes were observed, which revealed the pure hexagonal phase of Bi₂Se₃. Further, optical, thermoelectric and electrical characterization of the Bi₂Se₃ thin films deposited under various conditions showed the importance of r.f. power and post-selenization processes on their properties. The nearly c-axis-oriented Bi₂Se₃ thin film using magnetron sputtering with good structural quality will pave the way for futuristic large-area thermoelectric and opto-electronics devices.

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Titel: Bi2Se3 Topological Insulator Thin Films for Various Device Applications
verfasst von: Sudhanshu Gautam
Sunil S. Kushvaha
Verlag: Springer Nature Singapore
Buch: Nanomaterials for Innovative Energy Systems and Devices
Print ISBN: 978-981-19-0552-0

Electronic ISBN: 978-981-19-0553-7

Copyright-Jahr: 2022
DOI: https://doi.org/10.1007/978-981-19-0553-7_5

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