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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 23/2017

06.09.2017

Black aspergillus-derived highly porous carbon fibers for capacitive applications

verfasst von: Tingting Yang, Yunlong Xi, Yukun Zhu, Junzhi Li, Xuexue Pan, V. Yu. Izotov, Qing Guo, Wei Han

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 23/2017

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Abstract

The increasing demand for high-performance supercapacitors has aroused great interest in fabricating materials with excellent specific capacitance and cycling stability. Here we report a porous activated carbon (PAC) derived from the pyrolysis of the renewable filamentous fungi in an inert atmosphere. PAC exhibits a high specific surface area of 1800 m2 g−1 with hierarchical structures. The N doped PAC electrode shows a remarkable gravimetric capacitance of 298 F g−1, and excellent cycling stability with 100% capacitance retention after 10,000 cycles. In addition, the rate capability of this material is pretty good and better than that of previously reported graphene and activated carbon-based materials. Furthermore, the as-assembled symmetric supercapacitor device exhibits good gravimetric energy density of 10.32 W h Kg−1. This work provides a new sustainable source of filamentous fungi for fabricating high performance porous carbon materials for supercapacitors.
Vorheriger Artikel Controlled hydrothermal synthesis and optical properties of 3D flower-like CeO2 building with 3D hierarchical porous structure
Nächster Artikel Room temperature ferromagnetism and red shift of band gap in (Mn2+, Mg2+) co-doped ZnO nanoparticles

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Metadaten
Titel
Black aspergillus-derived highly porous carbon fibers for capacitive applications
verfasst von
Tingting Yang
Yunlong Xi
Yukun Zhu
Junzhi Li
Xuexue Pan
V. Yu. Izotov
Qing Guo
Wei Han
Publikationsdatum
06.09.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 23/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-7696-6

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