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Erschienen in:
Steep Slope Devices and TFETs Kapitel lesen Erstes Kapitel lesen

2016 | OriginalPaper | Buchkapitel

7. Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation

verfasst von : Hao Wang

Erschienen in: Tunneling Field Effect Transistor Technology

Verlag: Springer International Publishing

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Abstract

The unique band structure makes carbon nanotube (CNT) an ideal vehicle for tunnel FET (TFET) studying. In this chapter, the structure of CNT-TFET is optimized with numerical simulation. The band structure of CNT is acquired with p z orbital tight-binding model. Quantum mechanical simulation with the non-equilibrium Green’s function is adopted describing the carrier transport. TFET is compared with conventional MOSFET with CNT as the channel material. A steeper than 60 mv/dec inverse subthreshold slope is obtained at the cost of a smaller on current and the ambipolar conduction behavior. The current modulation mechanism of TFET is discussed concerning both the occupancy probability and tunnel probability. The occupancy probability can be modulated with band alignment, and the tunnel probability can be modulated with the electric field or tunnel path. Several optimized TFET structures including doping engineering, dielectric engineering, and gate work function engineering are demonstrated for improved performances with increased on current and/or reduced ambipolar conduction.

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Vorheriges Kapitel Quantum Transport Simulation of III-V TFETs with Reduced-Order Method
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Metadaten
Titel
Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation
verfasst von
Hao Wang
Copyright-Jahr
2016
Buch
Tunneling Field Effect Transistor Technology

Print ISBN: 978-3-319-31651-2

Electronic ISBN: 978-3-319-31653-6

Copyright-Jahr: 2016

DOI
https://doi.org/10.1007/978-3-319-31653-6_7

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