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Erschienen in:
2010 | OriginalPaper | Buchkapitel
5. CC-MOSFET Structure
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Abstract
The power MOSFET structures discussed in the previous chapters utilize a one-dimensional junction for supporting the drain voltage when operating in the blocking mode. As discussed and derived in Chap. 1, the smallest specific on-resistance that can be achieved in these devices is limited to the ideal specific on-resistance, which is given by:
A significantly smaller specific on-resistance can be achieved by utilizing a two-dimensional charge coupling effect that alters the electric field distribution from the triangular shape in a one-dimensional case to a rectangular shape for the two-dimensional case.
$$ {{\hbox{R}}_{{\mbox{on - ideal}}}}{\;=\;}\frac{{{{\rm 4B}}{{{\rm V}}^2}}}{{{{\varepsilon}_{{\rm S}}}{{\mu}_{{\rm n}}}{\hbox{E}}_{{\rm C}}^3}} $$
(5.1)