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Erschienen in:
1988 | OriginalPaper | Buchkapitel
Characteristics of SiO2 and SiOXNY, Obtained by Rapid Thermal Processes
verfasst von : N. Chan Tung, Y. Cartini, R. Pantel, J. L. Buevoz
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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Thin gate oxides of 30–150 Å are currently grown in a rapid thermal processing machine. Oxidation kinetics have been studied in the temperature range of 1000°-1250°C for an oxidation time of 5 to 60 s. An activation energy EA of 1.4 eV has been obtained. Rapid thermal nitridation of a 96 Å SiO2 film has been performed at a temperature of 1150°C for a nitridation time up to 150 s. The electrical characteristics of MOS capacitors were compared to those of MIS and an average breakdown field of 14.6 MV/cm has been obtained. The evolution of the stoichiometry of Nitrogen profiles has been studied for various nitridation times and will be discussed.