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Erschienen in:
1988 | OriginalPaper | Buchkapitel
Evidence for Oxygen Bubbles in Fluorine Doped Amorphous Silicon Dioxide Thin Films
verfasst von : A. G. Dias, E. Bustarret, R. C. da Silva
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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The superstoichiometry (x from 2.0 to 2.5) observed by R.B.S. in P.E.C.V.D. fluorine doped silicon dioxide thin films deposited at 300°C was correlated with the density of bonded oxygen detected by IR absorption spectroscopy. These results were interpreted in terms of structurally inhomogeneous Si Ox HY Fz films consisting in an a-Si:O:H:F phase and oxygen bubbles accomodated by a SiO2 tissue. This description is further supported by SEM, which shows sample blistering and bubble explosion upon annealing at 800°C.