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Erschienen in:
2001 | OriginalPaper | Buchkapitel
Characterization of Low-Frequency Noise of MOSFETs Using 2-D Device Simulator
verfasst von : Hyunchul Nah, Young June Park, Hong-Shick Min, Chanho Lee, Hyungsoon Shin
Erschienen in: Simulation of Semiconductor Processes and Devices 2001
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
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Low-frequency noise of the MOSFET was simulated using the transfer impedance method together with a 2-D device simulator. In the simulation, various generation-recombination (GR) components such as SRH recombination centers and surface traps of various lifetimes are taken into account. It is shown that lifetimes of traps determine the characteristics of low-frequency noise. Also is shown that the GR process not only at the surface but also in the bulk may be responsible for the low-frequency noise.