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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 2/2021

01.02.2021

Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure

verfasst von: Sanjib Kalita, Avrajyoti Dutta, Subhadeep Mukhopadhyay

Erschienen in: Optical and Quantum Electronics | Ausgabe 2/2021

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Abstract

In this work, we propose a novel double quantum well (QW) high electron mobility transistor (HEMT) structure. The DC and RF performances of this proposed structure are compared with those of conventional single QW HEMT. According to this work, the peak drain current of 651 mA/mm is achieved in conventional single QW HEMT, and the peak drain current of 758 mA/mm is achieved in proposed double QW HEMT. Also, the peak transconductances related to the proposed HEMT and conventional HEMT are compared. The peak current gain cut-off frequencies of two structures are compared. Also, the peak power gain cut-off frequencies of two structures are compared. According to these comparisons by simulation studies, the proposed double QW HEMT is more electrically efficient than the conventional single QW HEMT. Therefore, this present work may be a suitable prediction for the experimental fabrication of proposed double QW HEMT in future. This work may be suitable in sensor related applications and high frequency applications.
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Metadaten
Titel
Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure
verfasst von
Sanjib Kalita
Avrajyoti Dutta
Subhadeep Mukhopadhyay
Publikationsdatum
01.02.2021
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 2/2021
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-021-02750-0

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