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Journal of Electronic Materials
Erschienen in: Journal of Electronic Materials 6/2021

03.02.2021 | Topical Collection: 62nd Electronic Materials Conference 2020

Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2

verfasst von: Nobuo Sasaki, Muhammad Arif, Yukiharu Uraoka, Jun Gotoh, Shigeto Sugimoto

Erschienen in: Journal of Electronic Materials | Ausgabe 6/2021

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Abstract

Continuous-wave laser crystallization of amorphous Si (a-Si) thin films on a polyimide (PI)-coated glass substrate is studied by using a single scan of a highly uniform top-flat line-beam with a 123 nm SiO2 cap layer and a thin buffer layer at room temperature in air. The total buffer layer thickness is reduced to as thin as 1.55  μm including the heatsink a-Si layer and two SiO2 layers. Damage to the polyimide during the crystallization is successfully suppressed by the heatsink layer. An 88.3% {100} surface fraction is obtained for a 60-nm-thick Si thin film within 15° on polyimide even with a low scan velocity of 15 mm/s.
Vorheriger Artikel Analytical Calculation of Exciton Binding Energy, Quasi-Particle Band Gap and Optical Gap in Strained Mono-layer MoS2
Nächster Artikel X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices

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Metadaten
Titel
Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2
verfasst von
Nobuo Sasaki
Muhammad Arif
Yukiharu Uraoka
Jun Gotoh
Shigeto Sugimoto
Publikationsdatum
03.02.2021
Verlag
Springer US
Erschienen in
Journal of Electronic Materials / Ausgabe 6/2021
Print ISSN: 0361-5235
Elektronische ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-021-08751-9

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