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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 13/2019

03.06.2019 | Original Research

Coprecipitation synthesis of N, Fe doped anatase TiO2 nanoparticles and photocatalytic mechanism

verfasst von: Dongdong Liang, Shimin Liu, Zhinuo Wang, Yu Guo, Weiwei Jiang, Chaoqian Liu, Hualin Wang, Nan Wang, Wanyu Ding, Ming He, Li Wang, Shichong Xu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 13/2019

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Abstract

N, Fe single doped and co-doped anatase TiO2 nanoparticles were successfully prepared by coprecipitation method using TiCl4, NH4OH, Fe(NO3)3·9H2O as raw materials and polyvinyl alcohol as dispersant. The samples were characterized by TG-DSC, FTIR, XRD, FESEM, EDS, XPS, and UV–Vis to investigate the influence of doping concentration on the thermal effect, crystal structure, morphology, composition, energy band gap and photocatalytic activity of TiO2 nanoparticles. Results indicated that TiO2 nanoparticles doped with 0.15 at.% N and 0.3 at.% Fe showed the best photocatalytic activity. N, Fe co-doping had a synergistic effect: (1) The transformation inhibition of anatase to rutile phase was achieved, leading to formation of high crystallized monophasic anatase TiO2; (2) The bandgap narrowing effect was significant, increasing the light absorption range; (3) The small grain size of ~ 10 nm in diameter was obtained, resulting in effective separation of photo-induced electrons and holes.
Vorheriger Artikel Growth and characterization of Cu2SnS3 (CTS), Cu2SnSe3 (CTSe), and Cu2Sn(S,Se)3 (CTSSe) thin films using dip-coated Cu–Sn precursor
Nächster Artikel Effect of discharge time on the size control of AgNPs prepared by non-thermal atmospheric plasma discharge

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Metadaten
Titel
Coprecipitation synthesis of N, Fe doped anatase TiO2 nanoparticles and photocatalytic mechanism
verfasst von
Dongdong Liang
Shimin Liu
Zhinuo Wang
Yu Guo
Weiwei Jiang
Chaoqian Liu
Hualin Wang
Nan Wang
Wanyu Ding
Ming He
Li Wang
Shichong Xu
Publikationsdatum
03.06.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 13/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01623-3

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