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Journal of Materials Science
Erschienen in: Journal of Materials Science 3/2015

01.02.2015 | Original Paper

Correlation between grain orientation and carrier concentration of poly-crystalline In2O3 thin film grown by MOCVD

verfasst von: Ruiqin Hu, Yanli Pei, Zimin Chen, Jingchuan Yang, Jiayong Lin, Ya Li, Jun Liang, Bingfeng Fan, Gang Wang

Erschienen in: Journal of Materials Science | Ausgabe 3/2015

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Abstract

In this study, various In2O3 thin films were grown on c-plane sapphire substrates by metal–organic chemical vapor deposition via changing the growth parameters. The structural and electrical properties of the films were investigated by employing the X-ray diffraction (XRD), scanning electron microscopy, conductive atomic force microscopy (CAFM), and Hall Effect measurement. Results revealed that the investigated In2O3 thin films are bcc phase poly-crystalline with preferred orientation along the [100] or [111] direction. Moreover, the existence of two types of grains with different conductivities in the investigated In2O3 thin films was confirmed by CAFM measurement. Interestingly, a positive correlation was found between carrier concentrations and (222)/(400) XRD diffraction peak intensity ratios of the investigated In2O3 thin films. The mechanism of the positive correlation was explained by the difference in impurities concentrations between the two types of grains with the difference crystalline orientations.
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Metadaten
Titel
Correlation between grain orientation and carrier concentration of poly-crystalline In2O3 thin film grown by MOCVD
verfasst von
Ruiqin Hu
Yanli Pei
Zimin Chen
Jingchuan Yang
Jiayong Lin
Ya Li
Jun Liang
Bingfeng Fan
Gang Wang
Publikationsdatum
01.02.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 3/2015
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-014-8662-9

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