1988 | OriginalPaper | Buchkapitel
Defects in Silicon-on-Insulator Structures Formed by O+ Implantation: Their Dependence on Implantation Temperature
verfasst von : T. J. Ennis, R. C. Barklie, K. Reeson, P. L. F. Hemment
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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EPR measurements have been made on silicon-on-silicon dioxide samples produced by implanting n type (100) silicon wafers with a dose of 1.4 × 1018 0+cm-2 using 200 keV l60+ ions and an implantation temperature of 250, 350, 450 and 600°C The EPR spectra reveal the presence of E1′, Pbo and amorphous silicon centres. The dependence of the concentrations of these defects on implantation and annealing temperatures is reported.