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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 11/2023

01.11.2023

Depreciative behavior of nanotwinning towards emission in Ag doped CdS QDs

verfasst von: Tania Kalsi, P. Sakthivel, Sachin Kumar Godara, Rohit Medwal, Nupur Sxaena, Pragati Kumar

Erschienen in: Optical and Quantum Electronics | Ausgabe 11/2023

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Abstract

Microstructural defects play a critical role in flourishing various properties of materials. Here in this article, the effect of Ag substitution on the various properties of CdS quantum dots (QDs) is studied. Ag doped CdS QDs are synthesized using chemical co-precipitation, a simple, cost-effective method suitable for mass-production. High resolution transmission electron microscopy (HRTEM) images show dopant induced change in density and types of microstructural defects. The development of multiple nanotwinning at the cost of stacking faults as well as single twin boundary via the substitution of Ag in CdS lattice is noticed. In present study, a strong quantum confinement is observed and confirmed by the crystallite sizes estimated via X-ray diffraction (XRD) and TEM studies. A systematic enhancement in the bandgap and reduction in crystallite size are observed with increasing concentration of dopant. The atomic concentration of element and chemical bonding in CdS QDs are studied using X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) respectively. Unlike other elemental dopants, QDs when doped with Ag with the varying concentration exhibit a non-systematic emission behaviour with increasing concentration which is correlated to the microstructural defects and confinement strength.
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Metadaten
Titel
Depreciative behavior of nanotwinning towards emission in Ag doped CdS QDs
verfasst von
Tania Kalsi
P. Sakthivel
Sachin Kumar Godara
Rohit Medwal
Nupur Sxaena
Pragati Kumar
Publikationsdatum
01.11.2023
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 11/2023
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-023-05248-z

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