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2024 | OriginalPaper | Buchkapitel

Design and Comparison of Various Parameters of T-Shaped TFET of Variable Gate Lengths and Materials

verfasst von : Jyoti Upadhyay, Tarun Chaudhary, Ramesh Kumar Sunkaria, Mandeep Singh

Erschienen in: Micro-Electronics and Telecommunication Engineering

Verlag: Springer Nature Singapore

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Abstract

T-Shaped Dual-Gate TFET channel provides larger tunneling junction area which offers more electrons, which enhances I_ON current. This paper will provide a description and see different variations by using substrate material like Silicon, Gallium Arsenide, Germanium at different channel lengths (46 nm, 36 nm, 26 nm, 16 nm, 10 nm). For insulating material, we have taken Hafnium oxides (HfO₂) and Silicon-oxide. We have analyzed and compared crucial characteristics such as the I_ON/I_OFF ratio, the subthreshold swing (SS_avg), transconductance, BTBT, electric field (EF), and surface potential. Germanium material which shows better I_ON/I_OFF ratio and better subthreshold swing, Sensitivity than Silicon and Gallium Arsenide. Electric field and Surface Potential of device getting improved as we decrease the channel width.

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Titel: Design and Comparison of Various Parameters of T-Shaped TFET of Variable Gate Lengths and Materials
verfasst von: Jyoti Upadhyay
Tarun Chaudhary
Ramesh Kumar Sunkaria
Mandeep Singh
Verlag: Springer Nature Singapore
Buch: Micro-Electronics and Telecommunication Engineering
Print ISBN: 978-981-9995-61-5

Electronic ISBN: 978-981-9995-62-2

Copyright-Jahr: 2024
DOI: https://doi.org/10.1007/978-981-99-9562-2_20

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