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Surface Engineering and Applied Electrochemistry
Erschienen in: Surface Engineering and Applied Electrochemistry 5/2023

01.10.2023

Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

verfasst von: N. F. Zikrillaev, O. B. Tursunov, G. A. Kushiev

Erschienen in: Surface Engineering and Applied Electrochemistry | Ausgabe 5/2023

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Abstract

The possibility of the formation of structures such as compounds of elements between chalcogenides and the transition group of metals in the crystal lattice of silicon is studied. This is an urgent problem in electronics. It is shown that, under certain technological conditions, a sufficient concentration of unit cells is formed, which leads to a change in the band structure of silicon itself; i.e., a micro- and nanoscale inclusion in silicon with a direct-gap structure is obtained. The possibilities of creating a fundamentally new class of photocells with an extended spectral sensitivity region, as well as light-emitting devices, light-emitting diodes, and lasers based on them, are shown.
Vorheriger Artikel Electrocoagulation of Reactive Orange 16 Textile Dye Solution Using Steel, Aluminum, and Copper Metal Plates as Electrodes
Nächster Artikel The Influence of Surface Preparation on Corrosion-Protection Properties of Oxide Layers Formed on MA8 Magnesium Alloy by Microarc Oxidation

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Metadaten
Titel
Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms
verfasst von
N. F. Zikrillaev
O. B. Tursunov
G. A. Kushiev
Publikationsdatum
01.10.2023
Verlag
Pleiades Publishing
Erschienen in
Surface Engineering and Applied Electrochemistry / Ausgabe 5/2023
Print ISSN: 1068-3755
Elektronische ISSN: 1934-8002
DOI
https://doi.org/10.3103/S1068375523050198

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