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Springer Handbook of Electronic and Photonic Materials
Atomic diffusion in semiconductors refers to the migration of atoms, including host, dopant and impurities. Diffusion occurs in all thermodynamic phases, but the solid phase is the most important in semiconductors. There are two types of semiconductor solid phase: amorphous (including organic) and crystalline. In this chapter we consider crystalline semiconductors and describe the processes by which atoms and defects move between lattice sites. The emphasis is on describing the various conditions under which diffusion can occur, as well as the atomic mechanisms that are involved, rather than on tabulating data. For brevity’s sake, we also focus on the general features found in the principal semiconductors from Groups IV, III–V and II–VI; IV–VI and oxide semiconductors are excluded from consideration. It is not surprising that most of the data available in this field relate to the semiconductors that are technologically important – they are used to fabricate electronic and optoelectronic devices. One unavoidable consequence of this technological need is that diffusion data tend to be acquired in a piecemeal fashion.
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6.1
M. Knez: Semicond. Sci. Technol.
27, 074001 (2012)
CrossRef
6.2
P. Alen, M. Vehkamaki, M. Ritali, M. Leskela: J. Electrochem. Soc.
153, G304 (2006)
CrossRef
6.3
J. Hong, S. Lee, S. Lee, H. Han, C. Mahata, H.-W. Yeon, B. Koo, S.-I. Kim, T. Nam, K. Byun, B.-W. Min, Y.-W. Kim, H. Kim, Y.-C. Joo, T. Lee: Nanoscale
6, 7503 (2014)
CrossRef
6.4
J. Crank:
The Mathematics of Diffusion, 2nd edn. (Clarendon Press, Oxford 1979)
6.5
M.E. Glicksman:
Diffusion in Solids (Wiley, New York 2000)
6.6
A. Ural, P.B. Griffin, J.D. Plummer: J. Appl. Phys.
85, 6440 (1999)
CrossRef
6.7
I.B. Belova, D. Shaw, G.E. Murch: J. Appl. Phys.
106, 113707 (2009)
CrossRef
6.8
W. Frank, U. Gösele, H. Mehrer, A. Seeger: Diffusion in silicon and germanium. In:
Diffusion in Crystalline Solids, ed. by G.E. Murch, A.S. Nowick (Academic, Orlando 1984) p. 63
CrossRef
6.9
D. Mathiot, J.C. Pfister: J. Appl. Phys.
66, 970 (1989)
6.10
D. Shaw: General features of diffusion in semiconductors. In:
Atomic Diffusion in Semiconductors, ed. by D. Shaw (Plenum, London 1973) p. 1
CrossRef
6.11
D. Shaw: Self- and impurity diffusion processes in widegap II–VI materials. In:
Widegap II-VI Compounds for Opto-electronic Applications, ed. by H.E. Ruda (Chapman and Hall, London 1992) p. 244
CrossRef
6.12
D. Shaw, P. Capper: J. Mater. Sci. Mater. El
11, 169 (2000)
CrossRef
6.13
T.Y. Tan, U. Gösele, S. Yu: Crit. Rev. Sol. St. Mater. Sci.
17, 47 (1991)
CrossRef
6.14
R.B. Fair: Concentration profiles of diffused dopants in silicon. In:
Impurity Doping Processes in Silicon, ed. by F.F. Wang (North-Holland, Amsterdam 1981) p. 349
6.15
S.M. Hu: J. Appl. Phys.
70, R53 (1991)
CrossRef
6.16
G.B. Abdullaev, T.D. Dzhafarov:
Atomic Diffusion in Semiconductor Structures (Harwood, Chur 1987)
6.17
M. Laudon, N.N. Carlson, M.P. Masquelier, M.S. Daw, W. Windl: Appl. Phys. Lett.
78, 201 (2001)
CrossRef
6.18
K. Rajendran, W. Schoenmaker: J. Appl. Phys.
89, 980 (2001)
CrossRef
6.19
H. Takeuchi, P. Ranada, V. Subramanian, T.-J. King: Appl. Phys. Lett.
80, 3706 (2002)
CrossRef
6.20
S.C. Jain, W. Schoenmaker, R. Lindsay, P.A. Stolk, S. Decoutere, M. Willander, H.E. Maes: J. Appl. Phys.
91, 8919 (2002)
CrossRef
6.21
L. Shao, J. Chen, J. Zhang, D. Tang, S. Patel, J. Liu, X. Wang, W.-K. Chu: J. Appl. Phys.
96, 919 (2004)
CrossRef
6.22
Y.M. Haddara, J.C. Bravman: Ann. Rev. Mater. Sci.
28, 185 (1998)
CrossRef
6.23
I. Lyubomirsky, V. Lyahovitskaya, D. Cahen: Appl. Phys. Lett.
70, 613 (1997)
CrossRef
6.24
C.H. Chen, U. Gösele, T.Y. Tan: Appl. Phys. A
68, 9, 19, 313 (1999)
6.25
P.N. Grillot, S.A. Stockman, J.W. Huang, H. Bracht, Y.L. Chang: J. Appl. Phys.
91, 4891 (2002)
CrossRef
6.26
E. Chason, S.T. Picraux, J.M. Poate, J.O. Borland, M.I. Current, T. Diaz de la Rubia, D.J. Eaglesham, O.W. Holland, M.E. Law, C.W. Magee, J.W. Mayer, J. Melngailis, A.F. Tasch: J. Appl. Phys.
81, 6513 (1997)
6.27
J.L. Melendez, J. Tregilgas, J. Dodge, C.R. Helms: J. Electron Mater.
24, 1219 (1995)
CrossRef
6.28
F.S. Ham: J. Phys. Chem. Solids
6, 335 (1958)
CrossRef
6.29
F.S. Ham: J. Appl. Phys.
30, 915 (1959)
CrossRef
6.30
F.S. Ham: J. Appl. Phys.
30, 1518 (1959)
CrossRef
6.31
S.C. Jain, A.E. Hughes: Proc. R. Soc. Lond. A.
360, 47 (1978)
CrossRef
6.32
D. Peak, J.W. Corbett: Radiation Effects
36, 197 (1978)
CrossRef
6.33
D. Shaw: Phys. Stat. Sol. A
60, 251 (1980)
CrossRef
6.34
A. Borghesi, B. Pivac, A. Sassella, A. Stella: J. Appl. Phys.
77, 4169 (1995)
CrossRef
6.35
K.F. Kelton, R. Falster, D. Gambaro, M. Olmo, M. Cornaro, P.F. Wei: J. Appl. Phys.
85, 8097 (1999)
CrossRef
6.36
S. Solmi, E. Landi, F. Baruffaldi: J. Appl. Phys.
68, 3250 (1990)
CrossRef
6.37
S. Solmi, D. Nobili: J. Appl. Phys.
83, 2484 (1998)
CrossRef
6.38
B. Columbeau, N.E.B. Cowern: Semicond. Sci. Technol.
19, 1339 (2004)
CrossRef
6.39
S. Mirabella, E. Bruno, F. Priolo, D. Salvador, E. Napolitani, A.V. Drigo, A. Carnera: Appl. Phys. Lett.
83, 680 (2003)
CrossRef
6.40
C.J. Ortiz, P. Pilcher, T. Fhner, F. Cristiano, B. Columbeau, N.E.B. Cowern, A. Claverie: J. Appl. Phys.
96, 4866 (2004)
CrossRef
6.41
H. Puchner, S. Selberherr: IEEE Trans. Electron. Dev.
42, 1750 (1995)
CrossRef
6.42
C. Poisson, A. Rolland, J. Bernardini, N.A. Stolwijk: J. Appl. Phys.
80, 6179 (1996)
CrossRef
6.43
D. Shaw: Semicond. Sci. Technol.
12, 1079 (1997)
CrossRef
6.44
I. Kaur, Y. Mishin, W. Gust:
Fundamentals of Grain and Interphase Boundary Diffusion (Wiley, Chichester 1995)
6.45
G.J. Phelps: Semicond. Sci. Technol.
27, 035013 (2012)
CrossRef
6.46
S.M. Hu: J. Appl. Phys.
43, 2015 (1972)
CrossRef
6.47
N.G. Nilsson: Phys. Stat. Sol. A
50, K43 (1978)
CrossRef
6.48
H. Kroemer: IEEE Trans. Electron Dev.
ED-25, 850 (1978)
CrossRef
6.49
A.P. Vasov, B.S. Sokolovskii, L.S. Monastyrskii, O.Yu. Bonchyk, A. Barcz: Thin Solid Films
459, 28 (2004)
6.50
E.A. Caridi, T.Y. Chang, K.W. Goossen, L.F. Eastman: Appl. Phys. Lett.
56, 659 (1990)
CrossRef
6.51
A. Hangleiter, F. Hitzel, S. Lafman, H. Rossow: Appl. Phys. Lett.
83, 1169 (2003)
CrossRef
6.52
B. Tuck:
Atomic Diffusion in III-V Semiconductors (Adam Hilger, Bristol 1988)
6.53
S.J. Rothman: The measurement of tracer diffusion coefficient in solids. In:
Diffusion in Crystalline Solids, ed. by G.E. Murch, A.S. Nowick (Academic, Orlando 1984) p. 1
6.54
R.M. Fleming, D.B. McWhan, A.C. Gossard, W. Wiegmann, R.A. Logan: J. Appl. Phys.
51, 357 (1980)
CrossRef
6.55
E. Hüger, R. Kube, H. Bracht, J. Stahn, T. Geue, H. Schmidt: Phys. Stat. Sol. B
249, 2108 (2012)
CrossRef
6.56
V. Kolkovsky, S. Klemm, M. Allardt, J. Weber: Semicond. Sci. Technol.
28, 025007 (2013)
CrossRef
6.57
S.K. Estreicher, A. Docaj, M.B. Bebek, D.J. Backlund, M. Stavola: Phys. Stat. Sol. A
209, 1872 (2012)
CrossRef
6.58
Y.L. Huang, Y. Ma, R. Job, W.R. Fahmer, E. Simeon, C. Claeys: J. Appl. Phys.
98, 033511 (2005)
CrossRef
6.59
D. Mathiot: Phys. Rev. B
40, 5867 (1989)
CrossRef
6.60
E.V. Lavrov: Physica B
404, 5075 (2009)
CrossRef
6.61
J.C. Fan, G.W. Ding, S. Fung, Z. Xie, Y.C. Zhong, K.S. Wong, G. Brauer, W. Anwand, D. Grambole, C.C. Ling: Semicond. Sci. Technol.
25, 085009 (2010)
CrossRef
6.62
L. Xue, D.H. Tang, X.D. Qu, L.Z. Sun, W. Lu, J.X. Zhong: J. Appl. Phys.
110, 053704 (2011)
CrossRef
6.63
E. Simoen, C. Claeys: Diffusion and solubility of dopants in germanium. In:
Germanium-Based Technologies from Materials to Devices, ed. by C. Claeys, E. Simoen (Elsevier, Amsterdam 2007) p. 67
CrossRef
6.64
M. Werner, H. Mehrer, H.D. Hocheimer: Phys. Rev. B
37, 3930 (1985)
CrossRef
6.65
H. Bracht: Diffus. Fundam.
8, 1.1 (2008)
6.66
N.A. Stolwijk, W. Frank, J. Hlzl, S.J. Pearton, E.E. Haller: J. Appl. Phys.
57, 5211 (1985)
CrossRef
6.67
A. Strohm, S. Matics, W. Frank: Diffus. Defect Forum
194–199, 629 (2001)
CrossRef
6.68
H. Bracht, E.E. Haller, R. Clark-Phelps: Phys. Rev. Lett.
81, 393 (1998)
CrossRef
6.69
H. Bracht: Nuclear Instrum. Methods Phys. Res. B
253, 105 (2006)
CrossRef
6.70
A. Ural, P.B. Griffin, J.D. Plummer: Phys. Rev. Lett.
83, 3453 (1999)
CrossRef
6.71
T.Y. Tan, U. Gösele: Point defects, diffusion, and precipitation. In:
Handbook of Semiconductor Technolgy, , ed by K. A. Jackson, W. Schrter, Vol. 1, (Wiley-VCH, Weiheim 2000) p. 231
6.72
O. Krause, H. Ryssel, P. Pichler: J. Appl. Phys.
91, 5645 (2002)
CrossRef
6.73
S. Solmi, A. Parisini, M. Bersani, D. Giubertoni, V. Soncini, G. Carnevale, A. Benvenuti, A. Marmiroli: J. Appl. Phys.
92, 1361 (2002)
CrossRef
6.74
J.S. Christensen, H.H. Radamson, A.Yu. Kuznetsov, B.G. Svensson: Appl. Phys. Lett.
82, 2254 (2003)
6.75
L. Lerner, N.A. Stolwijk: Appl. Phys. Lett.
86, 011901 (2005)
CrossRef
6.76
R.C. Newman: J. Phys. Condens. Mat.
12, R335 (2000)
6.77
N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard-Hansen, A. Nylandsted-Larsen: Defect Diffus. Forum
194-199, 703 (2001)
CrossRef
6.78
A.D.N. Paine, A.F.W. Willoughby, M. Morooka, J.M. Bonar, P. Phillips, M.G. Dowsett, G. Cooke: Defect Diffus. Forum
143-147, 1131 (1997)
CrossRef
6.79
J.S. Christensen, H.H. Radamson, A.Yu. Kuznetsov, B.G. Svensson: J. Appl. Phys.
94, 6533 (2003)
6.80
P. Laitinen, I. Rihimki, J. Räisänen: Phys. Rev. B
68 155209 (2003)
6.81
A. Strohm, T. Voss, W. Frank, P. Laitinen, J. Räisänen: Z. Metallkunde
93, 737 (2002)
CrossRef
6.82
Y. Dong, W. Chern, P.M. Mooney, J.L. Hoyt, G. Xia: Semicond. Sci. Technol.
29, 015012 (2014)
CrossRef
6.83
J.M. Lento, L. Torpo, T.E.M. Staab, R.M. Nieminen: J. Phys. Condens. Matter
16, 1053 (2004)
CrossRef
6.84
M. Bockstedte, A. Mattausch, O. Pankratov: Phys. Rev. B
68, 205201 (2003)
CrossRef
6.85
J.D. Hong, R.F. Davis, D.E. Newbury: J. Mater. Sci.
16, 2485 (1981)
CrossRef
6.86
Y.A. Vodakov, G.A. Lomakina, E.N. Mokhov, V.G. Oding: Sov. Phys. Solid State
19, 1647 (1977)
6.87
Y.A. Vodakov, E.N. Mokhov: Diffusion and solubility of impurities. In:
Silicon Carbide – 1973, ed. by R.C. Marshall, J.W. Faust Jr., C.E. Ryan (Univ. South Carolina Press, Columbia 1973) p. 508
6.88
I.O. Usov, A.A. Suvorova, Y.A. Kudriatsev, A.V. Suvorova: J. Appl. Phys.
96, 4960 (2004)
CrossRef
6.89
N. Bagraev, A. Bouravleuv, A. Gippius, L. Klyachkin, A. Malyarenko: Defect Diffus. Forum
194–199, 679 (2001)
CrossRef
6.90
S. Bai, R.P. Devaty, W.J. Choyke, U. Kaiser, G. Wagner, M.F. MacMillan: Appl. Phys. Lett.
83, 3171 (2003)
CrossRef
6.91
D. Shaw: Semicond. Sci. Technol.
18, 627 (2003)
CrossRef
6.92
L. Wang, J.A. Wolk, L. Hsu, E.E. Haller, J.W. Erickson, M. Cardona, T. Ruf, J.P. Silveira, F. Brione: Appl. Phys. Lett.
70, 1831 (1997)
CrossRef
6.93
O. Ambacher, F. Freudenberg, R. Dimitrov, H. Angerer, M. Stutzmann: Jpn. J. Appl. Phys.
37, 2416 (1998)
CrossRef
6.94
S. Limpijumnong, C.G. Van de Walle: Phys. Rev. B
69, 035207 (2004)
CrossRef
6.95
M.G. Ganchenkova, R.M. Nieminen: Phys. Rev. Lett.
96, 196402 (2006)
CrossRef
6.96
U. Gerstmann, A.P. Seitsonen, F. Mauri: Phys. Stat. Sol. B
245, 924 (2008)
CrossRef
6.97
J.C. Hu, M.D. Deal, J.D. Plummer: J. Appl. Phys.
78, 1595 (1995)
CrossRef
6.98
J. Pöpping, N.A. Stolwijk, G. Bösker, C. Jäger, W. Jäger, U. Södervall: Defect Diffus. Forum
194–199, 723 (2001)
CrossRef
6.99
O. Koskelo, J. Risnen, F. Tuomisto, J. Sadovski: Semicond. Sci. Technol.
24, 045011 (2009)
CrossRef
6.100
M. Bosi, G. Attolini, C. Ferrari, C. Frigeri, M. Calicchio, F. Rossi, K. Vad, A. Csik, Z. Zolnai: J. Crystal Growth
318, 367 (2011)
CrossRef
6.101
A. Bchetnia, C. Saidia, M. Souissi, T. Boufaden, B. El Jani: Semocond. Sci. Technol.
24, 095020 (2009)
CrossRef
6.102
A.Y. Polyakov, N.B. Smirnov, S.J. Pearton, F. Ren, B. Theys, F. Jomard, Z. Teukam, V.A. Dmitriev, A.E. Nikolaev, A.S. Usikov, I.P. Nikitina: Appl. Phys. Lett.
79, 1834 (2001)
CrossRef
6.103
I. Harrison: J. Mater. Sci. Mater. Electron.
4, 1 (1993)
CrossRef
6.104
S. Govindaaraju, J.M. Reifsnider, M.M. Oye, A.L. Holmes: J. Electron. Mater.
32, 29 (2003)
CrossRef
6.105
D. Shaw: J. Crystal Growth
86, 778 (1988)
CrossRef
6.106
D. Shaw: J. Electron. Mater.
24, 587 (1995)
CrossRef
6.107
D. Shaw: Diffusion in MCT. In:
Mercury Cadmium Telluride, ed. by P. Capper, J. Garland (Wiley, Chichester 2011)
6.108
P. Capper, C.D. Maxey, C.L. Jones, J.E. Gower, E.S. O’Keefe, D. Shaw: J. Electron. Mater.
28, 637 (1999)
CrossRef
6.109
M.D. McCluskey, S.J. Jokela: J. Appl. Phys.
106, 071101 (2009)
CrossRef
6.110
D.J. Fisher (Ed.):
Diffusion and Defects in ZnO
, (Trans. Tech. Publications, Pfäffikon 2013)
6.111
D. Shaw: Semicond. Sci. Technol.
27, 035003 (2012)
CrossRef
6.112
D. Shaw: Semicond. Sci. Technol.
15, 911 (2000)
CrossRef
6.113
M. Kuttler, M. Grundmann, R. Heitz, U.W. Pohl, D. Bimberg, H. Stanzel, B. Hahn, W. Gebbhart: J. Crystal Growth
159, 514 (1996)
CrossRef
6.114
A. Barcz, G. Karczewski, T. Wojtowicz, J. Kossut: J. Crystal Growth
159, 980 (1996)
CrossRef
6.115
Z. Balogh, Z. Erdélyi, D.L. Beke, G.A. Langer, A. Csik, H.-G. Boyen, U. Wiedwald, P. Ziemann, A. Portavoce, C. Girardeaux: Appl. Phys. Lett.
92, 143104 (2008)
CrossRef
6.116
M. Strassburg, M. Kuttler, O. Stier, U.W. Pohl, D. Bimburg, M. Behringer, D. Hommel: J. Crystal Growth
184–185, 465 (1998)
CrossRef
6.117
M. Eslamian, M. Ziad Saghir: Fluid Dyn. Mater. Process.
8, 353 (2012)
6.118
J.C. Wang, R.F. Wood, P.P. Pronko: Appl. Phys. Lett.
33, 455 (1978)
CrossRef
6.119
S.K. Srivastava, D.K. Avasthi, W. Assmann, Z.G. Wang, H. Kucal, E. Jacquet, H.D. Carstanjen, M. Toulemonde: Phys. Rev. B
71, 193405 (2005)
CrossRef
6.120
P. Baeri, S.U. Campisano, G. Foti, E. Rimini: Appl. Phys. Lett.
33, 137 (1978)
CrossRef
6.121
J.C. Dyre: J. Phys. C
19, 5655 (1986)
CrossRef
6.122
Y.L. Khait, R. Beserman, D. Shaw, K. Dettmer: Phys. Rev. B
50, 14893 (1994)
CrossRef
6.123
T. Noda: J. Apl. Phys.
94, 6396 (2003)
CrossRef
- Titel
- Diffusion in Semiconductors
- DOI
- https://doi.org/10.1007/978-3-319-48933-9_6
- Autor:
-
Derek Shaw
- Verlag
- Springer International Publishing
- Sequenznummer
- 6
- Kapitelnummer
- 6