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Erschienen in:
2020 | OriginalPaper | Buchkapitel
37. Diodes 2
All-Oxide pn-Heterojunction DiodesHeterojunction diode with β-Ga2O3
verfasst von : Daniel Splith, Peter Schlupp, Holger von Wenckstern, Marius Grundmann
Erschienen in: Gallium Oxide
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Abstract
Due to the unipolarity and small predicted hole mobilities of \(\upbeta \text {-}\text {Ga}_{2}\text {O}_{3}\), bipolar homojunction diodes are not of relevance for this material. A valid alternative is the realization of heterojunction diodes, especially with other, p-type oxide semiconductors, as they also exhibit a high chemical stability as well as typically large bandgaps. Possible candidates for such p-type oxide semiconductors are e. g., nickel oxide, cuprous oxide, or zinc cobalt oxide. Here, the properties of \(\upbeta \text {-}\text {Ga}_{2}\text {O}_{3}\)/p-type oxide semiconductor heterojunction diodes are discussed for the different p-type semiconductors and different device layouts. Characteristic properties like ideality factor, rectification ratio, built-in potential, and breakdown voltage are compared for the different devices.