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Erschienen in:
18.11.2016
Direct surface relief formation by e-beam in amorphous chalcogenide layers
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2017
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Abstract
Patterning processes in amorphous Se and \(\hbox {As}_{20}\hbox {Se}_{80}\) films at short electron beam pulses (from 200 ns to 100 ms) were studied for the first time. The surface reliefs occurring as after-pulses effects were recorded and analysed. Giant hillock formation was detected at about \(200\,\upmu \hbox {s}\) pulses while very small changes in surface morphology were observed at other pulse durations. The obtained data indicate that the strong increase in e-beam sensitivity of mechanical response (giant surface hillock formation) at about \(200\,\upmu \hbox {s}\) is due to some resonance effect. A qualitative description is given, relating these times to the characteristic generation and relaxation time of the defects in these materials, which illuminates the process of e-beam induced structural rearrangement. The measurement has been performed at room temperature and at \(-120\,^{\circ }\hbox {C}\) and only a 20% change in the maximal pattern height has been detected.