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Erschienen in:
01.02.2014
Effect of NiO doping on microstructural and electrical properties of ZnO-based linear resistance ceramics
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 2/2014
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Abstract
The ZnO-based linear resistance ceramics were fabricated from ZnO–Al2O3–MgO–NiO at 1,340 °C. The effect of the different doping amounts of NiO on the microstructure and electrical properties were investigated in detail. Appropriate amount of NiO addition can reduces the nonlinear property and improves the resistance temperature coefficient of the ZnO-based linear resistance ceramics obviously. The samples with the NiO concentration of 15 mol% possess an energy density of 496 J/cm3 and a resistance temperature coefficient 1.15 × 10−4/°C, which are improved by 10 and 79 %, respectively. Moreover, the nonlinear coefficient of voltage decrease to 1.14, decreased by 11 % and the resistivity reaches to 43.53 Ω cm, increased by 76 %.