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Journal of Materials Science
Erschienen in: Journal of Materials Science 7/2024

16.02.2024 | Electronic materials

Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films

verfasst von: Minsoo Kim, Jong Yeog Son

Erschienen in: Journal of Materials Science | Ausgabe 7/2024

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Abstract

Polycrystalline NiO thin films with controlled oxygen vacancy concentration were deposited on Pt/Ta/SiO2/Si substrates using RF sputtering. Auger electron spectroscopy experiments confirmed that the NiO thin films exhibit approximately stoichiometric compositions of NiO, NiO0.95, and NiO0.94. These compositions were achieved using sputtering targets with controlled oxygen vacancy concentrations. The NiO resistive random access memory (RRAM) capacitors exhibited reduced formation voltage, SET voltage, and RESET voltage with increasing oxygen vacancy concentration. The decrease in forming, SET, and RESET voltages is attributed to the reduced Schottky barrier caused by oxygen vacancies at the Pt electrodes-NiO thin films interface. In particular, the increase in the oxygen vacancy concentration has the effect of reducing the voltage distributions of the forming, SET, and RESET voltages. Therefore, the results of this study are expected to be utilized in RRAM technology by understanding the values and distributions of formation voltages, SET voltages, and RESET voltages according to changes in oxygen deficiency concentration in the NiO RRAM capacitors.
Vorheriger Artikel Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns
Nächster Artikel Optimizing dielectric energy storage properties of BNT-based relaxor ferroelectric ceramics modified via Ba0.4Sr0.6TiO3

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Metadaten
Titel
Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films
verfasst von
Minsoo Kim
Jong Yeog Son
Publikationsdatum
16.02.2024
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 7/2024
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-024-09439-1

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