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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 19/2019

11.09.2019

Effect of sulfurization process on the properties of solution-processed Cu2SnS3 thin film solar cells

verfasst von: Yun Zhao, Xiuxun Han, Bin Xu, Chen Dong, Junshuai Li, Xingbin Yan

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 19/2019

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Abstract

Cu2SnS3 (CTS) based thin film solar cells were successfully fabricated through a facile solution processes followed by a post-sulfurization treatment. The influence of sulfurization temperature and time on the structural, compositional, morphological, optical and also the electrical properties of the solar cells were systematically studied. The results showed that the CTS thin films sulfurized at 580 °C would be a void-free and densely packed absorber layer with the grain size to be microns, having the band gap of ~ 1.01 eV. Furthermore, the sulfurization time is the key factor to influence the electronic properties of CTS absorber layer, and thus resulting in the best device performance of PCE = 2.41% by 20 min sulfurization process.
Vorheriger Artikel Highly efficient, visible active TiO2/CdS/ZnS photocatalyst, study of activity in an ultra low energy consumption LED based photo reactor
Nächster Artikel Enhanced photocatalytic reduction activity of BiOCl nanosheets loaded on β-Bi2O3

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Metadaten
Titel
Effect of sulfurization process on the properties of solution-processed Cu2SnS3 thin film solar cells
verfasst von
Yun Zhao
Xiuxun Han
Bin Xu
Chen Dong
Junshuai Li
Xingbin Yan
Publikationsdatum
11.09.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 19/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02148-5

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