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Erschienen in:
01.02.2015
Effects of leakage current on the short circuit current in the dual-junction solar cells
Erschienen in: Optical and Quantum Electronics | Ausgabe 2/2015
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Abstract
The characteristics of short circuit current (I\(_\mathrm{sc})\) in dual-junction GaInP/GaAs solar cells have been investigated, and the experimental results show that the photo current of GaInP top cell is higher than that of GaAs bottom cell and the I\(_\mathrm{sc}\) of the device is usually not limited by GaAs bottom cell if a leakage current occurs. The current versus voltage (I–V) curves of the solar cell were simulated with subcells based on single diode model and the I\(_\mathrm{sc}\) shows a dependence on the leaky subcells, i.e., the I\(_\mathrm{sc}\) is between the photo current of GaAs and that of GaInP subcells in the case of a leaky GaAs subcell, it is equal to the photo current of GaAs subcell in the case of a leaky GaInP subcell, and it is lower than the photo current of GaInP subcell when both GaAs and GaInP subcells are leaky.