Anzeige
Erschienen in:
01.08.2007
Effects of oxygen partial pressure control on the microstructure and PTCR properties of Ho doped BaTiO3
Erschienen in: Journal of Materials Science | Ausgabe 16/2007
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Effects of oxygen partial pressure (
\( {\hbox{P}}_{{\hbox{O}}_{\hbox{2}} } \)) control on the electrical properties and microstructural development of (Ba1-xHox)0.997TiO3 were studied. An oxidation condition (\( {\hbox{P}}_{{\hbox{O}}_{\hbox{2}} } \) ∼ 1.0 atm) was maintained during the heating process, and then the specimen was sintered in a reducing atmosphere (\( {\hbox{P}}_{{\hbox{O}}_{\hbox{2}} } \)
< 10−9 atm) at 1350 °C, followed by the annealing process at 1000 °C and \( {\hbox{P}}_{{\hbox{O}}_{\hbox{2}} } \)
= 1 atm. The switching temperature (TS) from the oxidation atmosphere to the reducing condition was changed from 1100 to 1350 °C. A significant decrease in the room-temperature resisitivity (ρ25) was observed as TS was increased. The temperature coefficient of resistance (TCR) was independent of the change in TS, and closed pores decreased with increasing TS.