Anzeige
Erschienen in:
01.06.2012
Electro-transport and structure of 1-2-3 HTSC single crystals with different plane defects topologies
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2012
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
In this work we study the structural and resistivity parameters of the 1-2-3 system HTSC single crystals by substituting yttrium to holmium and with a low (5%) aluminum doping. It was determined that in the case of non-stoichiometric samples, the structure of crystals, directly after the solution-melt growth, is close to tetragonal. In the process of additional oxygen saturation we observed a ferroelastic transition to orthorhombic phase, accompanied by the formation of a domain twin structure. The twin boundaries and the aluminum impurities are efficient scattering centers of normal carriers. At aluminum concentration y ≤ 0.5 the tweed structure is not formed.