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Erschienen in:
1981 | OriginalPaper | Buchkapitel
Electron Spectroscopy Studies of the Si-SiO2 Interface
verfasst von : C. R. Helms
Erschienen in: Surfaces and Interfaces in Ceramic and Ceramic — Metal Systems
Verlag: Springer US
Enthalten in: Professional Book Archive
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Electron spectroscopy has been used extensively for studies of the chemistry, morphology, and electronic structure, of the interface between single crystal silicon and thermally grown oxides as used in silicon integrated circuit technology. Results from these investigations, along with those from other techniques such as transmission electron microscopy,1, 2, 3 Rutherford backscattering,4, 5 and ellipsometry,6, 7 as well as the various electrical techniques,8 have provided us with probably a more detailed view of this interface than for any other solid-solid interface.