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Erschienen in:
1988 | OriginalPaper | Buchkapitel
Electronic Charge Transport in Thin SiO2 Films
verfasst von : D. R. Wolters, A. T. A. Zegers-van Duynhoven
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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Some observations concerning the Fowler Nordheim conduction of electrons in SiO2 are reviewed. The substrate hole currents accompanying the tunneling currents possibly originate from photon stimulated emission. Coulomb repulsion between adjacent sites inhibits trapping in the dielectric and realistic trapping kinetics have to account for this, as has been illustrated for high field and for avalanche injection.It has been shown that small electron fluences of ≤ 10-6C/cm2 are able to change the effective barrier height of the electrode-dielectric interface. The changes are attributed to the generation of interface traps.The degradation of the dielectric by further injection is described in terms of the generation of low-ohmic paths which can explain a number of phenomena not previously understood.