Electronic properties and lateral inhomogeneous barrier heights of n-InP rods/p-Si heterojunction prepared by liquid phase epitaxy

In/n-InP/p-Si/Al heterojunction has been manufactured by depositing InP layer onto p-Si single crystal substrates by liquid phase epitaxy (LPE) technique. InP layers was found to grow as rods with cubic zinc blende crystal structure. The electrical properties have been investigated in terms of current–voltage (I–V) and capacitance–voltage (C–V) measurements. The most predominant conduction mechanisms in the device are elucidated from the I–V characteristics over the temperature range 300–425 K. Based on thermionic emission theory at V < 0.8, the junction main parameters namely; the ideality factor, barrier height and series resistance are calculated as a function of temperature (300–425 K). Analysis showed that the device has inhomogeneous barrier heights which were found to follow Gauss distribution. At voltages 0.8 ≤ V ≤ 2, the conduction is controlled by space charge limited current in which the total trap concentration is determined as 1.39 × 10¹⁹ cm^− 3. The C–V measurements showed the abrupt nature of the junction. Based on these measurements, the built-in potential, carrier concentration and the width of the depletion region were obtained.