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2023 | OriginalPaper | Buchkapitel

Energy Band Gap Tuning Using 633 nm Laser Exposed on (GeS2)85(Sb2S3)15 Thin Films: An Optical Analysis Using Spectroscopic Techniques

verfasst von : Rajnish Raj, Pooja Lohia, D. K. Dwivedi

Erschienen in: VLSI, Microwave and Wireless Technologies

Verlag: Springer Nature Singapore

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Abstract

Thin films of sulphur-based chalcogenide glasses have been deposited on ultra-clean glass substrate using thermal evaporation technique. Optical properties of the thin films have been studied using UV–Vis spectrophotometer with the help of absorption spectra recorded in the range 300–900 nm. In the present paper, optical constants such as the absorption coefficient (α), extinction coefficient (k) and optical band gap (Eg) are obtained. It has been found that the absorption coefficient increases with increase in photon energy (hv), and the extinction coefficient decreases with increases in wavelength for laser-exposed thin films at different time intervals.

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Metadaten
Titel
Energy Band Gap Tuning Using 633 nm Laser Exposed on (GeS2)85(Sb2S3)15 Thin Films: An Optical Analysis Using Spectroscopic Techniques
verfasst von
Rajnish Raj
Pooja Lohia
D. K. Dwivedi
Copyright-Jahr
2023
Verlag
Springer Nature Singapore
DOI
https://doi.org/10.1007/978-981-19-0312-0_61