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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 19/2019

28.09.2019

Energy-storage properties of Sr-doped PLZST bulk ceramics and thick films

verfasst von: Xingyu Qi, Hongwei Chen, Bowen Deng, Jinyu Zhao, Meng Wei, Libin Gao, Jihua Zhang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 19/2019

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Abstract

The dielectric and energy-storage properties of (Pb0.97−xSrxLa0.02)(Zr0.675Sn0.285Ti0.04)O3 (x = 0, 0.005, 0.01, 0.015) bulk ceramics and thick films were investigated. All samples are orthorhombic perovskite antiferroelectric phase and have dielectric temperature relaxation property. Sr-dopant can improve the stability of the antiferroelectric phase and increase the phase transition field, but cause a decrease in dielectric constant. Thick films have a higher maximum tolerable external electric field strength than bulk ceramics. Compared with undoped thick film, the forward phase transition field and the backward phase transition field of the 1.5% doped thick film increased by 32% and 27%, respectively. The maximum polarization of the 1.5% doped thick film is decreased by 17%. The largest recoverable energy-storage density was obtained in thick film with 1% Sr doping. The largest recoverable energy-storage density is 2.77 J/cm3, which is 9.4% higher than the undoped thick film ceramic and 477% higher than the bulk ceramic with 1% Sr doping. The high energy storage density indicates that the obtained thick film is promising for pulsed power capacitors.
Vorheriger Artikel A high-performance room temperature methanol gas sensor based on alpha-iron oxide/polyaniline/PbS quantum dots nanofilm
Nächster Artikel Luminescence properties of double perovskite Gd2MgTiO6:Tb3+ phosphors by solid-state reaction method

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Metadaten
Titel
Energy-storage properties of Sr-doped PLZST bulk ceramics and thick films
verfasst von
Xingyu Qi
Hongwei Chen
Bowen Deng
Jinyu Zhao
Meng Wei
Libin Gao
Jihua Zhang
Publikationsdatum
28.09.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 19/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02144-9

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