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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 6/2018

26.12.2017

Enhancement of the thermoelectric performance of CuInTe2 via SnO2 in situ replacement

verfasst von: Weixin Li, Yubo Luo, Yun Zheng, Chengfeng Du, Qinghua Liang, Beibei Zhu, Lei Zhao

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2018

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Abstract

In situ induced nanostructure is employed as an alternative way to enhance the thermoelectric performance of p-type CuInTe2 based thermoelectric materials in this work. Dispersive In2O3 nanoparticles are formed in the samples with SnO2 by virtue of the in situ replacement of SnO2 and CuInTe2. As a result, an obvious reduction in the thermal conductivity has been achieved due to the intensive scattering of phonon by the in situ formed In2O3 nanoparticles. In addition, the power factor of CuInTe2 is less effected by SnO2 additive. Eventually, an enhanced ZT of 1.1 at 823 K has been achieved for the CuInTe2–0.5% SnO2 sample.
Vorheriger Artikel Comparative study of ENEPIG and thin ENEPIG as surface finishes for SAC305 solder joints
Nächster Artikel Structural and ferroelectric properties of microwave heated lead cobalt titanate nanoparticles synthesized by sol–gel technique

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Metadaten
Titel
Enhancement of the thermoelectric performance of CuInTe2 via SnO2 in situ replacement
verfasst von
Weixin Li
Yubo Luo
Yun Zheng
Chengfeng Du
Qinghua Liang
Beibei Zhu
Lei Zhao
Publikationsdatum
26.12.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 6/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-8427-8

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