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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 12/2016

13.08.2016

Facile preparation of TiO2 nanocrystals inserted in monodispersed mesoporous SiO2 nanospheres for enhanced photocatalytic activity

verfasst von: Tianxiu Qin, Shuxia Zhang, Pei Chen, Fengqi Zhao, Hongxu Gao, Xinbing Chen, Zhongwei An

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 12/2016

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Abstract

TiO2 nanocrystals are inserted in the pores of monodispersed mesoporous SiO2 nanospheres with 20–35 nm diameter by a facile two-step method involving vacuum-rotary evaporation and subsequent calcination. Characterization by XRD, TEM, EDX, FT-IR and N2 sorption techniques suggests that, the pores of the mesoporous SiO2 nanosphere can effectively stabilize the anatase phase of TiO2 nanocrystals with size about 6 nm even at high temperature of 750 °C. The photocatalytic activities of the samples with different TiO2 loading amount were evaluated by the degradation of Rhodamine B dye in aqueous solution under UV-light irradiation. It is found that photocatalytic efficiencies of these materials are much better than commercial P25. Where the sample with TiO2 loading of 43 % exhibits the highest photocatalytic efficiencies with complete degradation of Rhodamine B within 32 min, which is attributed to the balance between high surface area and suitable TiO2 loading amount.
Vorheriger Artikel A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO4/p-Si MOS capacitors
Nächster Artikel The influence of Ag substitution on structural and mechanical properties of (Bi, Pb)-2223 ceramics

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Metadaten
Titel
Facile preparation of TiO2 nanocrystals inserted in monodispersed mesoporous SiO2 nanospheres for enhanced photocatalytic activity
verfasst von
Tianxiu Qin
Shuxia Zhang
Pei Chen
Fengqi Zhao
Hongxu Gao
Xinbing Chen
Zhongwei An
Publikationsdatum
13.08.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 12/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5462-9

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