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Erschienen in:
1988 | OriginalPaper | Buchkapitel
Field Dependence of Time-To-Breakdown Distribution of Thin Oxides
verfasst von : P. Olivo, Thao N. Nguyen, B. Ricco
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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The accurate prediction of thin insulator reliability is of significant importance to the development of MOS VLSI technologies. In most reliability studies1,5, the time-to-failure tbd and/or the total injected charge prior to breakdown Qbd are measured under high field stresses typically greater than or equal to 8 MV/cm. These data are then extrapolated down to normal operating fields to give a prediction of device wear-out. The important assumptions of this procedure are: a) the phenomena that take place at high fields and eventually lead to oxide failure also occur at the operating field and b) no additional failure mechanisms exist at low fields. These assumptions have been used routinely but never been proven to be valid to our knowledge.