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Erschienen in:
1988 | OriginalPaper | Buchkapitel
Radiation Effects in MOS VLSI Structures
verfasst von : H. L. Hughes
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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Ionizing radiation is known to cause changes in the electrical properties of MOS devices1. Radiation effects in various oxide structures such as gate and field oxides have been previously studied2,3. As MOS technology now progresses to smaller feature sizes-one micron and less-new types of oxide regions have been added to VLSI circuits for device isolation and improved reliability. These new VLSI oxide structures, in turn, introduce new radiation-induced failure modes limiting circuit functionality and performance.