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Erschienen in:
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2016 | OriginalPaper | Buchkapitel

2. General Theories

verfasst von : Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky

Erschienen in: Dielectric Breakdown in Gigascale Electronics

Verlag: Springer International Publishing

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Abstract

In this section, we present a general survey of the theories and models that have been used to describe dielectric breakdown in amorphous thin films. The fundamental concepts for each theory are presented as initially proposed by the authors. Some of the models explained in this section include the E, 1/E, \( \sqrt{E} \), power-law, and the metal-catalyzed failure model. Commentary on the limitations for each model is provided. In the latter part of this chapter, we will discuss the most recent models for describing reliability trends in contemporary interconnect structures that employ low-κ nano-porous films. A general comparison between model predictions at low field is presented.

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Vorheriges Kapitel Introduction
Nächstes Kapitel Measurement Tools and Test Structures
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Metadaten
Titel
General Theories
verfasst von
Juan Pablo Borja
Toh-Ming Lu
Joel Plawsky
Copyright-Jahr
2016
Buch
Dielectric Breakdown in Gigascale Electronics

Print ISBN: 978-3-319-43218-2

Electronic ISBN: 978-3-319-43220-5

Copyright-Jahr: 2016

DOI
https://doi.org/10.1007/978-3-319-43220-5_2

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