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Erschienen in:
2014 | OriginalPaper | Buchkapitel
Growth and Characterization of MOCVD grown InP Quantum Dots on Si for Monolithic Integration
verfasst von : Nripendra N. Halder, Souvik Kundu, Rabibrata Mukherjee, D. Biswas, P. Banerji
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
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Integration of III-V based optoelectronics with Si microelectronics is one of the basic needs for next generation low cost monolithically integrated circuits. InP quantum dots (QDs) has been grown on Si substrate as a step for the integration of III-V based optoelectronics on Si. In this paper the growth details and the properties of the dots has been discussed. The luminescence property of the QDs has been analyzed with the help of the band alignment of the nano heterojunction. The carrier confinement mechanism has been discussed as well.