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Erschienen in:
Introduction to High-k Gate Stacks Kapitel lesen Erstes Kapitel lesen

2013 | OriginalPaper | Buchkapitel

4. Hf-Based High-k Gate Dielectric Processing

verfasst von : Masaaki Niwa

Erschienen in: High Permittivity Gate Dielectric Materials

Verlag: Springer Berlin Heidelberg

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Abstract

This chapter focuses on the processing of Hf-based high-k gate dielectric film and its device fabrication to improve its electrical properties. First, the formation process of Hf-based high-k dielectric thin film is introduced followed by detail study of these films from the materials science point of view, such as its crystallization and its control, carrier trapping and doping effect on the bulk high-k film. Finally, the device processing of the Field Effect Transistor including the CMOSFET with Hf-based high-k gate dielectric and metal gate electrode is discussed.

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Vorheriges Kapitel Hafnium-Based Gate Dielectric Materials
Nächstes Kapitel Metal Gate Electrodes
Literatur
1.
K. Mistry et al, in Technical Digest of International Electron Devices Meeting (IEDM), Washington, 247, 2007
2.
T. Aoyama, Kougyou Zairyou, 52(3), 30 (2004)
3.
S. Horii, K. Yamamoto, M. Asai, H. Miya, I. Kaneko, T. Ishihara, S. Hayashi, M. Niwa, Jpn. J. Appl. Phys. 43, 6963 (2004)CrossRef
4.
K. Yamamoto, M. Asai, S. Horii, H. Miya, M. Niwa, J. Vac. Sci. Technol. A21(4), 1033 (2003)
5.
M. Lukosius, Ch. Wenger, T. Schroeder, J. Dabrowski, R. Sorge, I. Costina, H.-J. Müssig, S. Pasko, Ch. Lohe, Microelectron. Eng. 84(2165), 9–10 (2007)
6.
A. Toriumi, K. Iwamoto, H. Ota, M. Kadoshima, W. Mizubayashi, T. Nabatame, A. Ogawa, K. Tominaga, T. Horikawa, H. Satake, Microelectron. Eng. 80, 190 (2005)CrossRef
7.
Y. Harada, M. Niwa, J. Park, D-L. Kwong, in Extended Abstracts of the 7th Workshop on Formation, Characterization and Reliability of Ultra-thin Silicon Oxides, Shizuoka, p. 53, 2002
8.
K. Yamamoto, S. Kubicek, A. Rothschild, R. Mitsuhashi, W. Deweerd, A. Veloso, M. Jurczak, S. Biesemans, S. De Gendt, S. Wickramanayaka, S. Hayashi, M. Niwa, Microelectron. Eng. 80, 198 (2005)CrossRef
9.
N. Nagai, H. Hashimoto, T. Matsunobe, Y. Muraji, Y. Ohtsuka, IEICE SDM 101(107), 1 (2001)
10.
M. B. Zahid et al., in Proceedings of Symposium on VLSI Technology (VLSI), 3B.1, Kyoto, 2007
11.
M. Niwa, in Proceedings of Symposium on VLSI Technology (VLSI), Short course, Key Technologies for 130-100 nm Generations, Honolulu, 28, 2000
12.
W.C. Butterman, W.R. Foster, Am. Mineral. 52, 880 (1967)
13.
S. Stemmer, Z. Chen, C.G. Levi, P.S. Lysaght, B. Foran, J.A. Gisby, J.R. Taylor, Jpn. J. Appl. Phys. 42, 3593 (2003)CrossRef
14.
M. Koyama et al., in Technical Digest of International Electron Devices Meeting (IEDM), Washington, p. 931, 2003
15.
M. Koyama et al., in Technical Digest of International Electron Devices Meeting (IEDM), San Francisco, p. 849, 2002
16.
S. Inumiya et al., in Proceedings of Symposium on VLSI Technology (VLSI), p. 17, Kyoto, 2003
17.
B.O’Sullivan et al., in Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, (SSDM), 372, Tsukuba, 2007
18.
J. Morais, L. Miotti, K.P. Bastos, S.R. Teixeira, I.J.R. Baumvol, A.L.P. Rotondaro, J.J. Chambers, M.R. Visokay, L. Colombo, M.C. Matrins Alves, Appl. Phys. Lett. 86, 212906 (2005)CrossRef
19.
A. Rothchild et al., in Proceedings of Sympsium on VLSI Technology (VLSI), Kyoto, p. 198, 2007
20.
D.H. Triyoso, R.I. Hedge, J. Jiang, J.K. Schaefer, M.V. Raymond, IEEE Electron. Device Lett. 29, 57 (2008)CrossRef
21.
M. Niwa et al., in Proceeding of the 201st Meeting, MOS Gate Stacks: High-K Dielectrics, Rapid Thermal and other Short Time Processing Technologies III, Abs. # 713, May, 2002, The Electrochemical Society
22.
Y. Harada et al., in Extended Abstracts of the 8th Workshop on Formation, Characterization and Reliability of Ultrathin Silicon Oxides, Shizuoka, p. 23, 2003
23.
Y. Harada et al., in Extended Abstracts of the 8th Workshop on Formation, Characterization and Reliability of Ultrathin Silicon Oxides, Shizuoka, p. 53, 2002
24.
Y. Harada et al., in Proceedings of Symposium on VLSI Technology (VLSI), Honolulu, p. 26, 2002
25.
R. Degreave, G. Groeseneken, R. Bellens, J.L. Ogier, M. Depas, P. Roussel, H.E. Maes, IEEE Trans. Electron Devices 45(4), 904 (1998)CrossRef
26.
A. Kerber et al., in Proceedings of Symposium on VLSI Technology (VLSI), Kyoto, p. 159, 2003
27.
R. Degraeve et al., in Proceedings of IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 239, 2008
28.
L. Manchanda et al., in Technical Digest of International Electron Devices Meeting (IEDM), San Francisco, p. 23, 2000
29.
P. J. Chen et al., in Proceedings of Symposium on VLSI Technology (VLSI), Honolulu, p. 192, 2002
30.
31.
M. Inoue et al., in Technical Digest of International Electron Devices Meeting (IEDM), Washington, p. 425, 2005
32.
R.I. Hegde, D.H. Triyoso, S.B. Samavedam, B.E. White Jr, J. Appl. Phys. 101, 74113 (2007)CrossRef
33.
D.H. Triyoso, G. Spencer, R.I. Hedge, R. Gregory, X.D. Wang, Appl. Phys. Lett. 92, 113501 (2008)CrossRef
34.
I. Hirano et al., in Proceedings of the 46th Annual International Reliability Physics Symposium, Phoenix, p. 659, 2008
35.
A. Kerber, Doctral thesis, Technischen Universität Darmstadt, Fig. 6.20, p. 70, 2003
36.
G. Bersuker et al., in Technical Digest of International Electron Devices Meeting (IEDM), San Francisco, p. 791, 2008
37.
K. Yamamoto, S. Hayashi, M. Kubota, M. Niwa, Appl. Phys. Lett. 81, 2053 (2002)CrossRef
38.
S. Hayashi, K. Yamamoto, Y. Harada, K. Eriguchi, M. Kubota, M. Niwa, Appl. Surf. Sci. 216, 228 (2003)CrossRef
39.
K. Yamamoto et al., in Extended. Abstract on 2002 International Conference on Solid State Devices and Materials (SSDM’02), Nagoya, B-1-3 #20, 2002
40.
K. Yamamoto, S. Hayashi, M. Niwa, M. Asai, S. Horii, H. Miya, Appl. Phys. Lett. 83(11), 2229 (2003)CrossRef
41.
S. Horii et al., in Extended. Abstract on 2002 International Conference on Solid State Devices and Materials (SSDM’02), Nagoya, p. 172, 2002
42.
M. Hiratani et al., in Extended. Abstract on 2003 International Conference on Solid State Devices and Materials (SSDM’03), Tokyo, p. 700, 2003
43.
S. Hayashi et al., in Proceedings of the 68th Symposium on Semiconductors and Integrated Circuits Technology, Kyoto, p. 29, 2005
44.
R. Mitsuhashi, K. Yamamoto, S. Hayashi, A. Rothschild, S. Kubicek, A. Veloso, S. Van Elshocht, M. Jurczak, S. De Gendt, S. Biesemans, M. Niwa, Microelectron. Eng. 80, 7 (2005)CrossRef
45.
E. Cartier et al., in Proceedings of Symposium on VLSI Technology (VLSI), Kyoto, p. 230, 2005
46.
E. P. Gusev et al., in Technical Digest of International Electron Devices Meeting (IEDM), San Francisco, p. 79, 2004
47.
T. Hoffman et al., in Technical Digest of International Electron Devices Meeting (IEDM), San Francisco, p. 269, 2006
48.
B.H. Lee, J. Oh, H.H. Tseng, R. Jammy, H. Huff, Mater. Today, 9, 32–40 (2006)
49.
K. Kita et al., in Technical Digest of International Electron Devices Meeting (IEDM), San Francisco, p. 29, 2008
50.
C. Hobbs et al., in Proceedings of Symposium on VLSI Technology (VLSI), Kyoto, p. 9, 2003
51.
Y. Shimamoto et al., in Proceedings of Symposium on VLSI Technology (VLSI), Kyoto, p. 132, 2005
52.
G. Tsutsui et al., in Proceedings of Symposium on VLSI Technology (VLSI), Kyoto, p. 176, 2007
53.
J.R. Hauser, K. Ahmed, in Characterization and Metrology for VLSI Technology, pp. 235–239, 1998
54.
M. Niwa, R. Mitsuhashi, K. Yamamoto, S. Hayashi, A. Rothchild, S. Kubicek, S. De Gendt, S. Biesemans, in NATO Science Series II: Mathematics, Physics and Chemistry, Defects in High-k Gate Dielectric Stacks, Nano-Electronic Semiconductor Devices, ed. by E. Gusev, vol. 220 (Springer Netherlands), pp. 1–15, 2005
55.
M. Niwa, R. Mitsuhashi, K. Yamamoto, S. Hayashi, Y. Harada, M. Kubota, A. Rothchild, T. Hoffmann, S. Kubicek, S. De Gendt, M. Heyns, S. Biesemans, Prospect of Hf-based gate dielectrics by PVD with FUSI gate for LSTP Application. in Physics and Technology of High-k Gate Dielectrics III, ed. by S. Kar, S. De Gendt, M. Houssa, D. Landheer, D. Misra, W. Tsai, ECS Transactions, vol. 1, no. 5 (The Electrochemical Society, Pennington, New Jersey, 2006)
56.
Private communication with Prof. T. P. Ma, July, 2005
57.
58.
N. Yasuda et al., in Extended. Abstract on 2003 International Conference on Solid State Devices and Materials (SSDM’05), Kobe, A-5-4 p. 250, 2005
59.
T. Ohguro et al., in Proceedings of Symposium on VLSI Technology (VLSI), Kyoto, p. 91, 2001
60.
M. Koike et al., in Technical Digest of International Electron Devices Meeting (IEDM), Washington, p. 103, 2003
61.
P. Sivasubramani et al., in Proceedings of Symposium on VLSI Technology (VLSI), Kyoto, p. 68, 2007
62.
M. Niwa, Short Course lecture, “Gate Stack Technology –From thin gate oxide to High-k gate dielectric”, From Basic Theory to Newest Application in MOS devices, 2009 International Conference on Solid State Devices and Materials (SSDM’09), Sendai, Oct. 6, 2009
63.
E. Cartier et al., in Proceedings of Symposium on VLSI Technology (VLSI), Kyoto, p. 42, 2009
64.
Private communication with Y. Harada, Sept. 2007
65.
P.S. Lysaght, J.C. Woicik, M.A. Sahiner, B.-H. Lee, R. Jammy, Appl. Phys. Lett. 91, 122910 (2007)CrossRef
Metadaten
Titel
Hf-Based High-k Gate Dielectric Processing
verfasst von
Masaaki Niwa
Copyright-Jahr
2013
Verlag
Springer Berlin Heidelberg
Buch
High Permittivity Gate Dielectric Materials

Print ISBN: 978-3-642-36534-8

Electronic ISBN: 978-3-642-36535-5

Copyright-Jahr: 2013

DOI
https://doi.org/10.1007/978-3-642-36535-5_4