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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 1/2016

01.01.2016

High-quality monolayer graphene for bulk laser mode-locking near 2 μm

verfasst von: Honglin Wan, Wei Cai, Fei Wang, Shouzhen Jiang, Shicai Xu, Jie Liu

Erschienen in: Optical and Quantum Electronics | Ausgabe 1/2016

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Abstract

The large-area and high-quality monolayer graphene film was grown on Cu foil by chemical vapor deposition (CVD) technique. A stable diode-pumped passively mode-locked Tm:YAP laser using the high-quality monolayer graphene as saturable absorber (SA) was accomplished for the first time. Under the absorbed pump power of 7.67 W, the maximum output power was 256 mW at the center wavelength of 1988.5 nm. The pulse train with a repetition rate of 62.38 MHz was generated with the highest single pulse energy of 4.1 nJ. Our work displays that graphene was a promising saturable absorber in making low-cost and ultrafast lasers.
Vorheriger Artikel Investigation of whether uniform carrier distribution in quantum wells can lead to higher performance in InGaN light-emitting diodes
Nächster Artikel Performance analysis of wavelet channel coding in COST207-based channel models on simulated radio-over-fiber systems at the W-band

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Metadaten
Titel
High-quality monolayer graphene for bulk laser mode-locking near 2 μm
verfasst von
Honglin Wan
Wei Cai
Fei Wang
Shouzhen Jiang
Shicai Xu
Jie Liu
Publikationsdatum
01.01.2016
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 1/2016
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-015-0277-0

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