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Perspectives on Electronic and Photonic Materials Kapitel lesen Erstes Kapitel lesen

2017 | OriginalPaper | Buchkapitel

34. II-VI Narrow Bandgap Semiconductors: Optoelectronics

verfasst von : Ian M. Baker

Erschienen in: Springer Handbook of Electronic and Photonic Materials

Verlag: Springer International Publishing

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Abstract

The main purpose of this chapter is to describe the applications and technology of II–VI narrow bandgap semiconductors, focussing on HgCdTe for infrared sensors. It provides a historical record of the development HgCdTe through photoconductors and photodiode arrays. The solid-state physics of HgCdTe is described to provide a foundation to explain the main crystal growth processes and device technologies. It concludes with a review of the research and development programs in centers around the world on third-generation infrared detector technology (so-called GEN III detectors). These include small pixel technology, higher operating temperature (HOT) device structures, two-color array technology, electron avalanche photodiodes (e-APDs), multifunctional HgCdTe detectors, retina level processing, and future trends for HgCdTe infrared detector arrays.

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Vorheriges Kapitel II-IV Semiconductors for Optoelectronics: CdS, CdSe, CdTe
Nächstes Kapitel Optoelectronic Devices and Materials
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Metadaten
Titel
II-VI Narrow Bandgap Semiconductors: Optoelectronics
verfasst von
Ian M. Baker
Copyright-Jahr
2017
Verlag
Springer International Publishing
Buch
Springer Handbook of Electronic and Photonic Materials

Print ISBN: 978-3-319-48931-5

Electronic ISBN: 978-3-319-48933-9

Copyright-Jahr: 2017

DOI
https://doi.org/10.1007/978-3-319-48933-9_34

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