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Erschienen in:
01.09.2014
Improving anti-reflectivity and laser damage threshold of \(\hbox {SiO}_{2}/\hbox {ZrO}_{2}\) thin films by laser shock peening at 1064 nm
Erschienen in: Optical and Quantum Electronics | Ausgabe 9/2014
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Abstract
In this study, anti-reflection (AR) \(\hbox {SiO}_{2}/ \hbox {ZrO}_{2}\) thin films with 3-layers were designed and fabricated by the essential Macleod software and physical vapor deposition, respectively. In order to improve the optical and physical properties of the prepared samples, laser shock peening (LSP) technique was applied. For this purpose, an Argon Fluoride Excimer laser \((\lambda =193 \,\text {nm})\) with 110 and 240 mJ energies and 1 Hz frequency at different pulses was used. The effect of LSP method in improving transmissions and laser damage thresholds of the prepared samples was proved by using UV–Vis–IR spectroscopy in the wavelength range of 400–1200 nm and international standard ISO11254 at 1064 nm. In addition, scanning electron microscopy was used to check the effect of applying LSP.