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The International Journal of Advanced Manufacturing Technology

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22.05.2021 | ORIGINAL ARTICLE

In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope

verfasst von: Dongyu Tian, Zongwei Xu, Lei Liu, Zhanqi Zhou, Junjie Zhang, Xuesen Zhao, Alexander Hartmaier, Bing Liu, Le Song, Xichun Luo

Erschienen in: The International Journal of Advanced Manufacturing Technology | Ausgabe 7-8/2021

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Abstract

Experimentally revealing the nanometric deformation behavior of 3C-SiC is challenging due to its ultra-small feature size for brittle-to-ductile transition. In the present work, we elucidated the nanometric cutting mechanisms of 3C-SiC by performing in situ nanometric cutting experiments under scanning electron microscope (SEM), as well as post-characterization by electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). In particular, a new method based on the combination of image processing technology and SEM online observation was proposed to achieve in situ measurement of cutting force with an uncertainty less than 1 mN. Furthermore, the cutting cross-section was characterized by atomic force microscope (AFM) to access the specific cutting energy. The results revealed that the specific cutting energy increase non-linearly with the decrease of cutting depth due to the size effect of cutting tool in nanometric cutting. The high-pressure phase transformation (HPPT) may play the major role in 3C-SiC ductile machining under the parameters of this experiment.

Vorheriger Artikel In-process detection of grinding burn using machine learning

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Titel: In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope
verfasst von: Dongyu Tian
Zongwei Xu
Lei Liu
Zhanqi Zhou
Junjie Zhang
Xuesen Zhao
Alexander Hartmaier
Bing Liu
Le Song
Xichun Luo
Publikationsdatum: 22.05.2021
Verlag: Springer London
Erschienen in: The International Journal of Advanced Manufacturing Technology / Ausgabe 7-8/2021
Print ISSN: 0268-3768
Elektronische ISSN: 1433-3015
DOI: https://doi.org/10.1007/s00170-021-07278-x

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