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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 5/2016

20.01.2016

Influence of annealing time on microstructure and dielectric properties of (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic thin films prepared by sol–gel method

verfasst von: Feng Shi, Jing Wang, Haiqing Sun

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 5/2016

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Abstract

(Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 dielectric ceramic thin films were fabricated on Si(100) substrates by sol–gel method followed by annealing in O2 atmosphere at 900 °C for 5, 15, 30, and 45 min. Results show that the surface morphologies of the samples are crack free and compact with well-crystallized structures. The grain sizes of the thin films increase with increased annealing time from 5 to 30 min. Thin films annealed for 30 min possess the minimum root–mean–square (RMS) value of roughness and the highest crystallinity among all samples as well as the best dielectric properties. Thus, 30 min is the optimal annealing time.
Vorheriger Artikel Influence of Bi2MoO6 decoration on the structure and photo-reactivity of (BiO)2CO3 photocatalyst
Nächster Artikel Characterization of V2O5 nanorods grown by spray pyrolysis technique

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Metadaten
Titel
Influence of annealing time on microstructure and dielectric properties of (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic thin films prepared by sol–gel method
verfasst von
Feng Shi
Jing Wang
Haiqing Sun
Publikationsdatum
20.01.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 5/2016
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-4337-4

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