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Erschienen in:
2012 | OriginalPaper | Buchkapitel
1. Introduction
verfasst von : Zhigang Shuai, Linjun Wang, Chenchen Song
Erschienen in: Theory of Charge Transport in Carbon Electronic Materials
Verlag: Springer Berlin Heidelberg
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Abstract
The charge mobility, μ, which characterizes the ability of a charge to move in a bulk semiconductor, is the essential parameter in determining the overall performance of electronic devices reported by Coropceanu et al. (Chem Rev 107:926, 2007). By definition, it is the charge drift velocity, v, acquired per driving electric field, F, i.e., μ = v/F, usually expressed in unit of cm2/Vs. In the absence of scattering, the field-induced momentum gain for an electron, Δq = −eFt, should increase linearly with the time period t. However, according to the classical Boltzmann transport picture, due to the scattering with impurities, defects, and lattice vibrations, the electron momentum is restored to its original value after the mean scattering time, τ, i.e., the average time between two consecutive scattering events.