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Erschienen in:
01.11.2018 | XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire
Erschienen in: Semiconductors | Ausgabe 11/2018
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Abstract
The structural properties of GaN(0001) heteroepitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) on a-plane (11\(\bar {2}\)0) sapphire substrates are investigated by X-ray diffractometry. Anisotropy of the rocking-curve width for the symmetric (0004) and asymmetric {11\(\bar {2}\)4} and {10\(\bar {1}\)5} reflections of gallium nitride upon rotation of the sample is observed. A comparison of the anisotropy of the rocking-curve width for GaN(0001)/Al2O3(11\(\bar {2}\)0) layers with two different variants of in-plane orientation relationships suggests that the anisotropy of the structural properties is independent of the thermoelastic stress arising upon cooling the heterostructure.