Ausgabe 12/2002
Inhalt (11 Artikel)
Regular Issue Paper
Studies of liquid-phase deposition-oxide/InP structure by liquid-phase deposition
C. J. Huang
Regular Issue Paper
The H2 plasma treatment of silver contacts: Impact on wire-bonding performance
M. Bielmann, P. Ruffieux, P. Schwaller, P. Sudan, L. Schlapbach, P. Gröning
Regular Issue Paper
Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors
M. Wolter, P. Javorka, A. Fox, M. Marso, H. Lüth, P. Kordoš, R. Carius, A. Alam, M. Heuken
Regular Issue Paper
Photonic effects during low-temperature ultraviolet-assisted oxidation of SiGe
V. Craciun, R. K. Singh, Ian W. Boyd
Regular Issue Paper
Schottky enhancement of contacts to n-(In0.52Al0.48)As using PdAl as a metallization
D. Ingerly, C. -F. Lin, C. Pelto, Y. A. Chang
Regular Issue Paper
Vapor pressures of the adducts formed during AlGaN organometallic vapor-phase epitaxy
J. Randall Creighton
Regular Issue Paper
Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition
Shyh-Fann Ting, Yean-Kuen Fang, Wen-Tse Hsieh, Yong-Shiuan Tsair, Cheng-Nan Chang, Chun-Sheng Lin, Ming-Chun Hsieh, Hsin-Che Chiang, Jyh-Jier Ho
Regular Issue Paper
Analyses of the practical adhesion strengths of the metal/polymer interfaces in electronic packaging
Jin Yu, J. Y. Song, I. S. Park
Regular Issue Paper
Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation
C. Virojanadara, P. -A. Glans, T. Balasubramanian, L. I. Johansson, E. B. Macak, Q. Wahab, L. D. Madsen
Regular Issue Paper
Anisotropic and selective grain growth during ohmic contact formation
Qianghua Xie, Peter Fejes, Ha Le, Ellen Lan
Regular Issue Paper
The Cu/n-GaAs schottky barrier diodes prepared by anodization process
Mehmet Biber, Abdulmecit Türüt